Structural and electrical properties of trimethylboron-doped silicon nanowires

Kok Keong Lew; Ling Pan; Timothy E. Bogart; Sarah M. Dilts; Elizabeth C. Dickey; Joan M. Redwing; Yanfeng Wang; Marco Cabassi; Theresa S. Mayer; Steven W. Novak

doi:10.1063/1.1792800

Structural and electrical properties of trimethylboron-doped silicon nanowires

Kok Keong Lew, Ling Pan, Timothy E. Bogart, Sarah M. Dilts, Elizabeth C. Dickey, Joan M. Redwing, Yanfeng Wang, Marco Cabassi, Theresa S. Mayer, Steven W. Novak

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Abstract

Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B ₂H ₆) sources. Boron concentrations ranging from 1 × 10 ¹⁸ to 4 × 10 ¹⁹ cm ^-3 were obtained by varying the inlet dopant/SiH ₄ gas ratio. TEM characterization revealed that the B ₂H ₆-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B ₂H ₆. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.

Original language	English (US)
Pages (from-to)	3101-3103
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1792800
State	Published - Oct 11 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{f0bbb0f10e0b4d1cbe2c41f157627a16,

title = "Structural and electrical properties of trimethylboron-doped silicon nanowires",

abstract = "Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B 2H 6) sources. Boron concentrations ranging from 1 × 10 18 to 4 × 10 19 cm -3 were obtained by varying the inlet dopant/SiH 4 gas ratio. TEM characterization revealed that the B 2H 6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B 2H 6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.",

author = "Lew, {Kok Keong} and Ling Pan and Bogart, {Timothy E.} and Dilts, {Sarah M.} and Dickey, {Elizabeth C.} and Redwing, {Joan M.} and Yanfeng Wang and Marco Cabassi and Mayer, {Theresa S.} and Novak, {Steven W.}",

note = "Funding Information: This work was supported by the National Science Foundation (NSF) under Grant No. DMR-0103068 and The Pennsylvania State University Materials Research Science and Engineering Center (MRSEC) on Nanoscale Science.",

year = "2004",

month = oct,

day = "11",

doi = "10.1063/1.1792800",

language = "English (US)",

volume = "85",

pages = "3101--3103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Structural and electrical properties of trimethylboron-doped silicon nanowires

AU - Lew, Kok Keong

AU - Pan, Ling

AU - Bogart, Timothy E.

AU - Dilts, Sarah M.

AU - Dickey, Elizabeth C.

AU - Redwing, Joan M.

AU - Wang, Yanfeng

AU - Cabassi, Marco

AU - Mayer, Theresa S.

AU - Novak, Steven W.

N1 - Funding Information: This work was supported by the National Science Foundation (NSF) under Grant No. DMR-0103068 and The Pennsylvania State University Materials Research Science and Engineering Center (MRSEC) on Nanoscale Science.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B 2H 6) sources. Boron concentrations ranging from 1 × 10 18 to 4 × 10 19 cm -3 were obtained by varying the inlet dopant/SiH 4 gas ratio. TEM characterization revealed that the B 2H 6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B 2H 6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.

AB - Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B 2H 6) sources. Boron concentrations ranging from 1 × 10 18 to 4 × 10 19 cm -3 were obtained by varying the inlet dopant/SiH 4 gas ratio. TEM characterization revealed that the B 2H 6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B 2H 6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.

UR - http://www.scopus.com/inward/record.url?scp=8644276396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8644276396&partnerID=8YFLogxK

U2 - 10.1063/1.1792800

DO - 10.1063/1.1792800

M3 - Article

AN - SCOPUS:8644276396

SN - 0003-6951

VL - 85

SP - 3101

EP - 3103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Structural and electrical properties of trimethylboron-doped silicon nanowires

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