Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

S. Krishna; D. Zhu; J. Xu; K. K. Linder; O. Qasaimeh; P. Bhattacharya; D. L. Huffaker

doi:10.1063/1.371664

Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

S. Krishna, D. Zhu, J. Xu, K. K. Linder, O. Qasaimeh, P. Bhattacharya, D. L. Huffaker

Research output: Contribution to journal › Article › peer-review

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Abstract

Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.

Original language	English (US)
Pages (from-to)	6135-6138
Number of pages	4
Journal	Journal of Applied Physics
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.371664
State	Published - Dec 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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title = "Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm",

abstract = "Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.",

author = "S. Krishna and D. Zhu and J. Xu and Linder, {K. K.} and O. Qasaimeh and P. Bhattacharya and Huffaker, {D. L.}",

year = "1999",

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T1 - Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

AU - Krishna, S.

AU - Zhu, D.

AU - Xu, J.

AU - Linder, K. K.

AU - Qasaimeh, O.

AU - Bhattacharya, P.

AU - Huffaker, D. L.

PY - 1999/12

Y1 - 1999/12

N2 - Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.

AB - Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.

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Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

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