Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

S. Krishna; D. Zhu; J. Xu; K. K. Linder; O. Qasaimeh; P. Bhattacharya; D. L. Huffaker

doi:10.1063/1.371664

Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

S. Krishna
, D. Zhu
, J. Xu
, K. K. Linder
, O. Qasaimeh
, P. Bhattacharya
, D. L. Huffaker

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.

Original language	English (US)
Pages (from-to)	6135-6138
Number of pages	4
Journal	Journal of Applied Physics
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.371664
State	Published - Dec 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.371664

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@article{5684a3574b3e40ff9b678ad9dbcb45c9,

title = "Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm",

abstract = "Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.",

author = "S. Krishna and D. Zhu and J. Xu and Linder, \{K. K.\} and O. Qasaimeh and P. Bhattacharya and Huffaker, \{D. L.\}",

year = "1999",

month = dec,

doi = "10.1063/1.371664",

language = "English (US)",

volume = "86",

pages = "6135--6138",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

AU - Krishna, S.

AU - Zhu, D.

AU - Xu, J.

AU - Linder, K. K.

AU - Qasaimeh, O.

AU - Bhattacharya, P.

AU - Huffaker, D. L.

PY - 1999/12

Y1 - 1999/12

N2 - Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.

AB - Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.

UR - https://www.scopus.com/pages/publications/0000651197

UR - https://www.scopus.com/pages/publications/0000651197#tab=citedBy

U2 - 10.1063/1.371664

DO - 10.1063/1.371664

M3 - Article

AN - SCOPUS:0000651197

SN - 0021-8979

VL - 86

SP - 6135

EP - 6138

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

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