Abstract
Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6135-6138 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 86 |
| Issue number | 11 |
| DOIs | |
| State | Published - Dec 1999 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- General Physics and Astronomy
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