Abstract
The solid state reactions carried in a multimode microwave chamber was investigated. A single mode TE 103 cavity are treated inside a quartz reaction tube in which, the position of E-field lies at centers whereas the position of H-field lies along the sides of the cavity. Highly doped n-type silicon powder responded aggresively to a 2.45 GHz microwave E-field whereas it remained completely unpertubed in the H-field. Results show that the E-field treatment has considerably distorted the lattice structure creating lattice strains throughout the sample.
Original language | English (US) |
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Number of pages | 1 |
State | Published - Dec 1 2004 |
Event | 2004 AIChE Annual Meeting - Austin, TX, United States Duration: Nov 7 2004 → Nov 12 2004 |
Other
Other | 2004 AIChE Annual Meeting |
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Country/Territory | United States |
City | Austin, TX |
Period | 11/7/04 → 11/12/04 |
All Science Journal Classification (ASJC) codes
- General Engineering