Structural characterization of molecular-beam epitaxially grown Zn 1-x MnxSe on GaAs(001) substrates

S. B. Qadri; N. Samarth; J. K. Furdyna

doi:10.1063/1.344070

Structural characterization of molecular-beam epitaxially grown Zn _1-x Mn_xSe on GaAs(001) substrates

S. B. Qadri, N. Samarth, J. K. Furdyna

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7 Scopus citations

Abstract

Epitaxially grown single-crystal films of Zn_1-xMn_xSe have been characterized by x-ray diffraction techniques. Their dislocation densities have been estimated from double-crystal rocking-curve measurements. Values of the unit cell parameters normal and parallel to the substrate surface, as determined from (004) and (444) reflections, indicate that the films have some degree of tetragonal distortion for higher Mn compositions.

Original language	English (US)
Pages (from-to)	3622-3625
Number of pages	4
Journal	Journal of Applied Physics
Volume	66
Issue number	8
DOIs	https://doi.org/10.1063/1.344070
State	Published - 1989

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.344070

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title = "Structural characterization of molecular-beam epitaxially grown Zn 1-x MnxSe on GaAs(001) substrates",

abstract = "Epitaxially grown single-crystal films of Zn1-xMnxSe have been characterized by x-ray diffraction techniques. Their dislocation densities have been estimated from double-crystal rocking-curve measurements. Values of the unit cell parameters normal and parallel to the substrate surface, as determined from (004) and (444) reflections, indicate that the films have some degree of tetragonal distortion for higher Mn compositions.",

author = "Qadri, {S. B.} and N. Samarth and Furdyna, {J. K.}",

year = "1989",

doi = "10.1063/1.344070",

language = "English (US)",

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journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Structural characterization of molecular-beam epitaxially grown Zn 1-x MnxSe on GaAs(001) substrates

AU - Qadri, S. B.

AU - Samarth, N.

AU - Furdyna, J. K.

PY - 1989

Y1 - 1989

N2 - Epitaxially grown single-crystal films of Zn1-xMnxSe have been characterized by x-ray diffraction techniques. Their dislocation densities have been estimated from double-crystal rocking-curve measurements. Values of the unit cell parameters normal and parallel to the substrate surface, as determined from (004) and (444) reflections, indicate that the films have some degree of tetragonal distortion for higher Mn compositions.

AB - Epitaxially grown single-crystal films of Zn1-xMnxSe have been characterized by x-ray diffraction techniques. Their dislocation densities have been estimated from double-crystal rocking-curve measurements. Values of the unit cell parameters normal and parallel to the substrate surface, as determined from (004) and (444) reflections, indicate that the films have some degree of tetragonal distortion for higher Mn compositions.

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JF - Journal of Applied Physics

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Structural characterization of molecular-beam epitaxially grown Zn _1-x Mn_xSe on GaAs(001) substrates

Abstract

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