Structural characterization of multilayer metal phosphonate film on silicon using angular-dependent x-ray photoelectron spectroscopy

S. Akhter; H. Lee; H. G. Hong; T. E. Mallouk; J. M. White

doi:10.1116/1.576058

Structural characterization of multilayer metal phosphonate film on silicon using angular-dependent x-ray photoelectron spectroscopy

S. Akhter, H. Lee, H. G. Hong, T. E. Mallouk, J. M. White

Chemistry

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 + 80 A.

Original language	English (US)
Pages (from-to)	1608-1613
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.576058
State	Published - May 1989

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 + 80 A.",

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year = "1989",

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T1 - Structural characterization of multilayer metal phosphonate film on silicon using angular-dependent x-ray photoelectron spectroscopy

AU - Akhter, S.

AU - Lee, H.

AU - Hong, H. G.

AU - Mallouk, T. E.

AU - White, J. M.

PY - 1989/5

Y1 - 1989/5

N2 - A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 + 80 A.

AB - A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 + 80 A.

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Structural characterization of multilayer metal phosphonate film on silicon using angular-dependent x-ray photoelectron spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

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