Abstract
With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.
Original language | English (US) |
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Pages (from-to) | 550-552 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 46 |
Issue number | 6 |
DOIs | |
State | Published - 1985 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)