Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices

R. E. Mikawa; P. M. Lenahan

doi:10.1063/1.95534

Structural damage at the Si/SiO₂ interface resulting from electron injection in metal-oxide-semiconductor devices

R. E. Mikawa
, P. M. Lenahan

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO₂ interface, termed P_b, is shown to be responsible for the interface states induced by electron injection. We find that these P_b centers are amphoteric interface state defects.

Original language	English (US)
Pages (from-to)	550-552
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	6
DOIs	https://doi.org/10.1063/1.95534
State	Published - 1985

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.95534

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@article{17d8d3891bea41f28b113970ac67524e,

title = "Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices",

abstract = "With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.",

author = "Mikawa, \{R. E.\} and Lenahan, \{P. M.\}",

year = "1985",

doi = "10.1063/1.95534",

language = "English (US)",

volume = "46",

pages = "550--552",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

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T1 - Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices

AU - Mikawa, R. E.

AU - Lenahan, P. M.

PY - 1985

Y1 - 1985

N2 - With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.

AB - With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.

UR - https://www.scopus.com/pages/publications/36549095817

UR - https://www.scopus.com/pages/publications/36549095817#tab=citedBy

U2 - 10.1063/1.95534

DO - 10.1063/1.95534

M3 - Article

AN - SCOPUS:36549095817

SN - 0003-6951

VL - 46

SP - 550

EP - 552

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Structural damage at the Si/SiO₂ interface resulting from electron injection in metal-oxide-semiconductor devices

Abstract

All Science Journal Classification (ASJC) codes

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