Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method

Sunil V. Barma; Sachin R. Rondiya; Yogesh A. Jadhav; Sagar B. Jathar; Ganesh K. Rahane; Avinash V. Rokade; Russell W. Cross; Mamta P. Nasane; Vijaya S. Jadkar; Nelson Y. Dzade; Sandesh R. Jadkar

doi:10.30919/esmm5f1040

Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method

Sunil V. Barma, Sachin R. Rondiya, Yogesh A. Jadhav, Sagar B. Jathar, Ganesh K. Rahane, Avinash V. Rokade, Russell W. Cross, Mamta P. Nasane, Vijaya S. Jadkar, Nelson Y. Dzade, Sandesh R. Jadkar

John and Willie Leone Department of Energy & Mineral Engineering (EME)

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this study, we report the synthesis and characterization of CdSe nanocrystals (NCs) by facile hot injection (HI) method. The formation of CdSe NCs was confirmed by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The optical properties were analyzed by UV-visible and photoluminescence (PL) spectroscopy shows an excitonic peak at 617 nm in PL spectra corresponds to the band gap of ∼2 eV favourable for optoelectronic device applications. The Photoelectrochemical (PEC) performance of CdSe thin film prepared by spin coating method demonstrates a rise of photocurrent density (Jsc = 0.081 μAcm-2) after illumination. The Mott-Schottky (MS) and electrochemical impedance spectroscopy (EIS) measurements were further carried out to understand intrinsic properties namely the type of conductivity, flat band potential, charge carrier density (ND), charge transfer resistance, and recombination lifetime. The n-type conductivity, the charge carrier density of ND = 1.292 x 1016 cm-3, and recombination lifetime of 32.4 μs suggest the ideal behaviour of CdSe NCs for device quality photoelectrodes.

Original language	English (US)
Pages (from-to)	50-56
Number of pages	7
Journal	ES Materials and Manufacturing
Volume	11
DOIs	https://doi.org/10.30919/esmm5f1040
State	Published - Mar 2021

All Science Journal Classification (ASJC) codes

Building and Construction
Ceramics and Composites
Metals and Alloys
Polymers and Plastics
Applied Mathematics
Modeling and Simulation
Numerical Analysis

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Barma, S. V., Rondiya, S. R., Jadhav, Y. A., Jathar, S. B., Rahane, G. K., Rokade, A. V., Cross, R. W., Nasane, M. P., Jadkar, V. S., Dzade, N. Y., & Jadkar, S. R. (2021). Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method. ES Materials and Manufacturing, 11, 50-56. https://doi.org/10.30919/esmm5f1040

@article{165bce1808ec44cf8bf9932924fb73b0,

title = "Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method",

abstract = "In this study, we report the synthesis and characterization of CdSe nanocrystals (NCs) by facile hot injection (HI) method. The formation of CdSe NCs was confirmed by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The optical properties were analyzed by UV-visible and photoluminescence (PL) spectroscopy shows an excitonic peak at 617 nm in PL spectra corresponds to the band gap of ∼2 eV favourable for optoelectronic device applications. The Photoelectrochemical (PEC) performance of CdSe thin film prepared by spin coating method demonstrates a rise of photocurrent density (Jsc = 0.081 μAcm-2) after illumination. The Mott-Schottky (MS) and electrochemical impedance spectroscopy (EIS) measurements were further carried out to understand intrinsic properties namely the type of conductivity, flat band potential, charge carrier density (ND), charge transfer resistance, and recombination lifetime. The n-type conductivity, the charge carrier density of ND = 1.292 x 1016 cm-3, and recombination lifetime of 32.4 μs suggest the ideal behaviour of CdSe NCs for device quality photoelectrodes.",

author = "Barma, {Sunil V.} and Rondiya, {Sachin R.} and Jadhav, {Yogesh A.} and Jathar, {Sagar B.} and Rahane, {Ganesh K.} and Rokade, {Avinash V.} and Cross, {Russell W.} and Nasane, {Mamta P.} and Jadkar, {Vijaya S.} and Dzade, {Nelson Y.} and Jadkar, {Sandesh R.}",

note = "Funding Information: EP/S001395/1). Yogesh Jadhav thanks SPPU PDF (Grant No. SPPU-PDF/ ST/CH/2019/0004) and School of Energy Studies, SPPU for financial support and access to laboratory facilities. Sandesh Jadkar is thankful to the University Grants Commission (UPE program), New Delhi, and Indo-French Centre for the Promotion of Advanced Research-CEFIPRA, Department of Science and Technology, New Delhi for special financial support. Funding Information: SachinRondiya, Russell Cross, and Nelson Dzadeacknowledge the UK Engineering and Physical Sciences Research Council (EPSRC) for funding (Grant No. Publisher Copyright: {\textcopyright} Engineered Science Publisher LLC 2021.",

year = "2021",

month = mar,

doi = "10.30919/esmm5f1040",

language = "English (US)",

volume = "11",

pages = "50--56",

journal = "ES Materials and Manufacturing",

issn = "2578-0611",

publisher = "Engineered Science Publisher",

}

TY - JOUR

T1 - Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method

AU - Barma, Sunil V.

AU - Rondiya, Sachin R.

AU - Jadhav, Yogesh A.

AU - Jathar, Sagar B.

AU - Rahane, Ganesh K.

AU - Rokade, Avinash V.

AU - Cross, Russell W.

AU - Nasane, Mamta P.

AU - Jadkar, Vijaya S.

AU - Dzade, Nelson Y.

AU - Jadkar, Sandesh R.

N1 - Funding Information: EP/S001395/1). Yogesh Jadhav thanks SPPU PDF (Grant No. SPPU-PDF/ ST/CH/2019/0004) and School of Energy Studies, SPPU for financial support and access to laboratory facilities. Sandesh Jadkar is thankful to the University Grants Commission (UPE program), New Delhi, and Indo-French Centre for the Promotion of Advanced Research-CEFIPRA, Department of Science and Technology, New Delhi for special financial support. Funding Information: SachinRondiya, Russell Cross, and Nelson Dzadeacknowledge the UK Engineering and Physical Sciences Research Council (EPSRC) for funding (Grant No. Publisher Copyright: © Engineered Science Publisher LLC 2021.

PY - 2021/3

Y1 - 2021/3

N2 - In this study, we report the synthesis and characterization of CdSe nanocrystals (NCs) by facile hot injection (HI) method. The formation of CdSe NCs was confirmed by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The optical properties were analyzed by UV-visible and photoluminescence (PL) spectroscopy shows an excitonic peak at 617 nm in PL spectra corresponds to the band gap of ∼2 eV favourable for optoelectronic device applications. The Photoelectrochemical (PEC) performance of CdSe thin film prepared by spin coating method demonstrates a rise of photocurrent density (Jsc = 0.081 μAcm-2) after illumination. The Mott-Schottky (MS) and electrochemical impedance spectroscopy (EIS) measurements were further carried out to understand intrinsic properties namely the type of conductivity, flat band potential, charge carrier density (ND), charge transfer resistance, and recombination lifetime. The n-type conductivity, the charge carrier density of ND = 1.292 x 1016 cm-3, and recombination lifetime of 32.4 μs suggest the ideal behaviour of CdSe NCs for device quality photoelectrodes.

AB - In this study, we report the synthesis and characterization of CdSe nanocrystals (NCs) by facile hot injection (HI) method. The formation of CdSe NCs was confirmed by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The optical properties were analyzed by UV-visible and photoluminescence (PL) spectroscopy shows an excitonic peak at 617 nm in PL spectra corresponds to the band gap of ∼2 eV favourable for optoelectronic device applications. The Photoelectrochemical (PEC) performance of CdSe thin film prepared by spin coating method demonstrates a rise of photocurrent density (Jsc = 0.081 μAcm-2) after illumination. The Mott-Schottky (MS) and electrochemical impedance spectroscopy (EIS) measurements were further carried out to understand intrinsic properties namely the type of conductivity, flat band potential, charge carrier density (ND), charge transfer resistance, and recombination lifetime. The n-type conductivity, the charge carrier density of ND = 1.292 x 1016 cm-3, and recombination lifetime of 32.4 μs suggest the ideal behaviour of CdSe NCs for device quality photoelectrodes.

UR - http://www.scopus.com/inward/record.url?scp=85105465003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85105465003&partnerID=8YFLogxK

U2 - 10.30919/esmm5f1040

DO - 10.30919/esmm5f1040

M3 - Article

AN - SCOPUS:85105465003

SN - 2578-0611

VL - 11

SP - 50

EP - 56

JO - ES Materials and Manufacturing

JF - ES Materials and Manufacturing

ER -

Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method

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