Structural origins of electrical asymmetries of ZnO vertical thin film transistors

Kaige G. Sun; Shelby F. Nelson; Thomas Nelson Jackson

doi:10.1109/DRC.2015.7175631

Structural origins of electrical asymmetries of ZnO vertical thin film transistors

Kaige G. Sun, Shelby F. Nelson, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm²/Vs) and large on-off ratio (>10⁷) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.

Original language	English (US)
Title of host publication	73rd Annual Device Research Conference, DRC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	197-198
Number of pages	2
Volume	2015-August
ISBN (Electronic)	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175631
State	Published - Aug 3 2015
Event	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: Jun 21 2015 → Jun 24 2015

Other

Other	73rd Annual Device Research Conference, DRC 2015
Country/Territory	United States
City	Columbus
Period	6/21/15 → 6/24/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/DRC.2015.7175631

Cite this

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title = "Structural origins of electrical asymmetries of ZnO vertical thin film transistors",

abstract = "Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.",

author = "Sun, {Kaige G.} and Nelson, {Shelby F.} and Jackson, {Thomas Nelson}",

year = "2015",

month = aug,

day = "3",

doi = "10.1109/DRC.2015.7175631",

language = "English (US)",

volume = "2015-August",

pages = "197--198",

booktitle = "73rd Annual Device Research Conference, DRC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",

}

Sun, KG, Nelson, SF & Jackson, TN 2015, Structural origins of electrical asymmetries of ZnO vertical thin film transistors. in 73rd Annual Device Research Conference, DRC 2015. vol. 2015-August, 7175631, Institute of Electrical and Electronics Engineers Inc., pp. 197-198, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 6/21/15. https://doi.org/10.1109/DRC.2015.7175631

Structural origins of electrical asymmetries of ZnO vertical thin film transistors. / Sun, Kaige G.; Nelson, Shelby F.; Jackson, Thomas Nelson.
73rd Annual Device Research Conference, DRC 2015. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. 197-198 7175631.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Structural origins of electrical asymmetries of ZnO vertical thin film transistors

AU - Sun, Kaige G.

AU - Nelson, Shelby F.

AU - Jackson, Thomas Nelson

PY - 2015/8/3

Y1 - 2015/8/3

N2 - Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.

AB - Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.

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M3 - Conference contribution

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BT - 73rd Annual Device Research Conference, DRC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 73rd Annual Device Research Conference, DRC 2015

Y2 - 21 June 2015 through 24 June 2015

ER -

Structural origins of electrical asymmetries of ZnO vertical thin film transistors

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