Abstract
The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N=Si2 and O2=N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2=N-Si bonding is deepest in the sample whereas the O-N=Si2 bonding is associated with a surface oxide.
Original language | English (US) |
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Pages (from-to) | 579-586 |
Number of pages | 8 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 567 |
DOIs | |
State | Published - 1999 |
Event | Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA Duration: Apr 5 1999 → Apr 8 1999 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering