Structure and bonding in nitrided oxide films by sims and XPS

S. W. Novak; J. R. Shallenberger; D. A. Cole; J. W. Marino

doi:10.1557/proc-567-579

Structure and bonding in nitrided oxide films by sims and XPS

S. W. Novak
, J. R. Shallenberger
, D. A. Cole
, J. W. Marino

Materials Characterization Lab

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N₂O, NO-O₂ and NH₃ gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si₃ bonding in the gas source films, N≡Si₃ and O-N-Si₂ bonding in the remote plasma sample, and N≡Si₃, O-N=Si₂ and O₂=N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O₂=N-Si bonding is deepest in the sample whereas the O-N=Si₂ bonding is associated with a surface oxide.

Original language	English (US)
Pages (from-to)	579-586
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	567
DOIs	https://doi.org/10.1557/proc-567-579
State	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA Duration: Apr 5 1999 → Apr 8 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

@article{b62a3c4b1b16438ba3ceb480f6d03db0,

title = "Structure and bonding in nitrided oxide films by sims and XPS",

abstract = "The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N=Si2 and O2=N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2=N-Si bonding is deepest in the sample whereas the O-N=Si2 bonding is associated with a surface oxide.",

author = "Novak, \{S. W.\} and Shallenberger, \{J. R.\} and Cole, \{D. A.\} and Marino, \{J. W.\}",

year = "1999",

doi = "10.1557/proc-567-579",

language = "English (US)",

volume = "567",

pages = "579--586",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - Structure and bonding in nitrided oxide films by sims and XPS

AU - Novak, S. W.

AU - Shallenberger, J. R.

AU - Cole, D. A.

AU - Marino, J. W.

PY - 1999

Y1 - 1999

N2 - The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N=Si2 and O2=N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2=N-Si bonding is deepest in the sample whereas the O-N=Si2 bonding is associated with a surface oxide.

AB - The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N=Si2 and O2=N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2=N-Si bonding is deepest in the sample whereas the O-N=Si2 bonding is associated with a surface oxide.

UR - https://www.scopus.com/pages/publications/0033345267

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U2 - 10.1557/proc-567-579

DO - 10.1557/proc-567-579

M3 - Conference article

AN - SCOPUS:0033345267

SN - 0272-9172

VL - 567

SP - 579

EP - 586

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics

Y2 - 5 April 1999 through 8 April 1999

ER -

Structure and bonding in nitrided oxide films by sims and XPS

Abstract

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