Structure and piezoelectric properties of sol-gel-derived 0.5 Pb[Yb 1/2Nb1/2]O3-0.5 PbTiO3 thin films

Q. Q. Zhang; Q. F. Zhou; S. Trolier-Mckinstry

doi:10.1063/1.1472476

Structure and piezoelectric properties of sol-gel-derived 0.5 Pb[Yb _1/2Nb_1/2]O₃-0.5 PbTiO₃ thin films

Q. Q. Zhang, Q. F. Zhou, S. Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

0.5 Pb[Yb_1/2Nb_1/2]O₃-0.5 PbTiO₃ thin films were deposited on (111) Pt/Ti/SiO₂/Si substrates by sol-gel processing using a thin Pb(Zr_0.52Ti_0.48)O ₃ seed layer. X-ray diffraction analysis and scanning electron microscopy revealed that the films were strongly (111) oriented, mimicking the orientation of the (111) Pt/Ti/SiO₂/Si substrate. No pyrochlore phase was observed by x-ray diffraction and the films had a uniform grain size of about 50-60 nm. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100-10000 Hz. At 1 kHz, the dielectric permittivity was 1025 and dielectric loss was 0.028. The films exhibited good ferroelectric and piezoelectric properties. The remanent polarization (P _r) was 30 μC/cm². The effective transverse piezoelectric e_31,f coefficient (-4.8 C/m²) of the films was measured using a modified wafer flexure method.

Original language	English (US)
Pages (from-to)	3370-3372
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	18
DOIs	https://doi.org/10.1063/1.1472476
State	Published - May 6 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1472476

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@article{b842509de5c049a9a7b4ff3ca8e71351,

title = "Structure and piezoelectric properties of sol-gel-derived 0.5 Pb[Yb 1/2Nb1/2]O3-0.5 PbTiO3 thin films",

abstract = "0.5 Pb[Yb1/2Nb1/2]O3-0.5 PbTiO3 thin films were deposited on (111) Pt/Ti/SiO2/Si substrates by sol-gel processing using a thin Pb(Zr0.52Ti0.48)O 3 seed layer. X-ray diffraction analysis and scanning electron microscopy revealed that the films were strongly (111) oriented, mimicking the orientation of the (111) Pt/Ti/SiO2/Si substrate. No pyrochlore phase was observed by x-ray diffraction and the films had a uniform grain size of about 50-60 nm. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100-10000 Hz. At 1 kHz, the dielectric permittivity was 1025 and dielectric loss was 0.028. The films exhibited good ferroelectric and piezoelectric properties. The remanent polarization (P r) was 30 μC/cm2. The effective transverse piezoelectric e31,f coefficient (-4.8 C/m2) of the films was measured using a modified wafer flexure method.",

author = "Zhang, {Q. Q.} and Zhou, {Q. F.} and S. Trolier-Mckinstry",

year = "2002",

month = may,

day = "6",

doi = "10.1063/1.1472476",

language = "English (US)",

volume = "80",

pages = "3370--3372",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Structure and piezoelectric properties of sol-gel-derived 0.5 Pb[Yb 1/2Nb1/2]O3-0.5 PbTiO3 thin films

AU - Zhang, Q. Q.

AU - Zhou, Q. F.

AU - Trolier-Mckinstry, S.

PY - 2002/5/6

Y1 - 2002/5/6

N2 - 0.5 Pb[Yb1/2Nb1/2]O3-0.5 PbTiO3 thin films were deposited on (111) Pt/Ti/SiO2/Si substrates by sol-gel processing using a thin Pb(Zr0.52Ti0.48)O 3 seed layer. X-ray diffraction analysis and scanning electron microscopy revealed that the films were strongly (111) oriented, mimicking the orientation of the (111) Pt/Ti/SiO2/Si substrate. No pyrochlore phase was observed by x-ray diffraction and the films had a uniform grain size of about 50-60 nm. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100-10000 Hz. At 1 kHz, the dielectric permittivity was 1025 and dielectric loss was 0.028. The films exhibited good ferroelectric and piezoelectric properties. The remanent polarization (P r) was 30 μC/cm2. The effective transverse piezoelectric e31,f coefficient (-4.8 C/m2) of the films was measured using a modified wafer flexure method.

AB - 0.5 Pb[Yb1/2Nb1/2]O3-0.5 PbTiO3 thin films were deposited on (111) Pt/Ti/SiO2/Si substrates by sol-gel processing using a thin Pb(Zr0.52Ti0.48)O 3 seed layer. X-ray diffraction analysis and scanning electron microscopy revealed that the films were strongly (111) oriented, mimicking the orientation of the (111) Pt/Ti/SiO2/Si substrate. No pyrochlore phase was observed by x-ray diffraction and the films had a uniform grain size of about 50-60 nm. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100-10000 Hz. At 1 kHz, the dielectric permittivity was 1025 and dielectric loss was 0.028. The films exhibited good ferroelectric and piezoelectric properties. The remanent polarization (P r) was 30 μC/cm2. The effective transverse piezoelectric e31,f coefficient (-4.8 C/m2) of the films was measured using a modified wafer flexure method.

UR - http://www.scopus.com/inward/record.url?scp=79956032910&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956032910&partnerID=8YFLogxK

U2 - 10.1063/1.1472476

DO - 10.1063/1.1472476

M3 - Article

AN - SCOPUS:79956032910

SN - 0003-6951

VL - 80

SP - 3370

EP - 3372

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Structure and piezoelectric properties of sol-gel-derived 0.5 Pb[Yb _1/2Nb_1/2]O₃-0.5 PbTiO₃ thin films

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