Structure and transport properties of Cr doped La214 system

Gaojie Xu; Zhiqiang Mao; Hao Jin; Yunbo Jia; Hongjie Yan; Jianwu Zhang; Yuheng Zhang

doi:10.1016/S0921-4534(99)00176-8

Structure and transport properties of Cr doped La214 system

Gaojie Xu
, Zhiqiang Mao
, Hao Jin
, Yunbo Jia
, Hongjie Yan
, Jianwu Zhang
, Yuheng Zhang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The structure and normal state transport properties of La_1.85-xSr_0.15-xCu_1-xCr_xO₄ (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.

Original language	English (US)
Pages (from-to)	263-268
Number of pages	6
Journal	Physica C: Superconductivity and its Applications
Volume	314
Issue number	3
DOIs	https://doi.org/10.1016/S0921-4534(99)00176-8
State	Published - Mar 20 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/S0921-4534(99)00176-8

Cite this

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title = "Structure and transport properties of Cr doped La214 system",

abstract = "The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.",

author = "Gaojie Xu and Zhiqiang Mao and Hao Jin and Yunbo Jia and Hongjie Yan and Jianwu Zhang and Yuheng Zhang",

note = "Funding Information: This work was supported by the National Foundation for Outstanding Young Scientists, the National Center for Research and Development on Superconductivity, China Postdoctoral Science Foundation. ",

year = "1999",

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doi = "10.1016/S0921-4534(99)00176-8",

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TY - JOUR

T1 - Structure and transport properties of Cr doped La214 system

AU - Xu, Gaojie

AU - Mao, Zhiqiang

AU - Jin, Hao

AU - Jia, Yunbo

AU - Yan, Hongjie

AU - Zhang, Jianwu

AU - Zhang, Yuheng

N1 - Funding Information: This work was supported by the National Foundation for Outstanding Young Scientists, the National Center for Research and Development on Superconductivity, China Postdoctoral Science Foundation.

PY - 1999/3/20

Y1 - 1999/3/20

N2 - The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.

AB - The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.

UR - https://www.scopus.com/pages/publications/0032654570

UR - https://www.scopus.com/pages/publications/0032654570#tab=citedBy

U2 - 10.1016/S0921-4534(99)00176-8

DO - 10.1016/S0921-4534(99)00176-8

M3 - Article

AN - SCOPUS:0032654570

SN - 0921-4534

VL - 314

SP - 263

EP - 268

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - 3

ER -

Structure and transport properties of Cr doped La214 system

Abstract

All Science Journal Classification (ASJC) codes

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