Structure-dependent Fano resonances in the infrared spectra of phonons in few-layer graphene

Zhiqiang Li, Chun Hung Lui, Emmanuele Cappelluti, Lara Benfatto, Kin Fai Mak, G. L. Carr, Jie Shan, Tony F. Heinz

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking. These observations reflect the strong coupling between phonons and interband electronic transitions in these systems and the distinctive variation in the joint density of electronic states in samples of differing thickness and stacking order.

Original languageEnglish (US)
Article number156801
JournalPhysical review letters
Issue number15
StatePublished - Apr 10 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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