Structure of 6H silicon carbide/silicon dioxide interface trapping defects

David J. Meyer; Nathaniel A. Bohna; Patrick M. Lenahan; Aivars J. Lelis

doi:10.1063/1.1723693

Structure of 6H silicon carbide/silicon dioxide interface trapping defects

David J. Meyer, Nathaniel A. Bohna, Patrick M. Lenahan, Aivars J. Lelis

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22 Scopus citations

Abstract

The deep level trap defects at the interface of 6H silicon carbide and the SiO ₂ gate dielectric in SiC metal-oxide-semiconductor field effect transistors were discussed. The trapping defects on the interface were observed using spin-dependent recombination (SDR) technique. The SiC/SiO ₂interface recombination currents were found to be correlated with the SDR response. The correlation between the recombination current peak and SDR peak showed that the SDR defect was a dominating deep-level trap at the SiC/SiO ₂ interface.

Original language	English (US)
Pages (from-to)	3406-3408
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	17
DOIs	https://doi.org/10.1063/1.1723693
State	Published - Apr 26 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1723693

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title = "Structure of 6H silicon carbide/silicon dioxide interface trapping defects",

abstract = "The deep level trap defects at the interface of 6H silicon carbide and the SiO 2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors were discussed. The trapping defects on the interface were observed using spin-dependent recombination (SDR) technique. The SiC/SiO 2interface recombination currents were found to be correlated with the SDR response. The correlation between the recombination current peak and SDR peak showed that the SDR defect was a dominating deep-level trap at the SiC/SiO 2 interface.",

author = "Meyer, {David J.} and Bohna, {Nathaniel A.} and Lenahan, {Patrick M.} and Lelis, {Aivars J.}",

year = "2004",

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doi = "10.1063/1.1723693",

language = "English (US)",

volume = "84",

pages = "3406--3408",

journal = "Applied Physics Letters",

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T1 - Structure of 6H silicon carbide/silicon dioxide interface trapping defects

AU - Meyer, David J.

AU - Bohna, Nathaniel A.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars J.

PY - 2004/4/26

Y1 - 2004/4/26

N2 - The deep level trap defects at the interface of 6H silicon carbide and the SiO 2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors were discussed. The trapping defects on the interface were observed using spin-dependent recombination (SDR) technique. The SiC/SiO 2interface recombination currents were found to be correlated with the SDR response. The correlation between the recombination current peak and SDR peak showed that the SDR defect was a dominating deep-level trap at the SiC/SiO 2 interface.

AB - The deep level trap defects at the interface of 6H silicon carbide and the SiO 2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors were discussed. The trapping defects on the interface were observed using spin-dependent recombination (SDR) technique. The SiC/SiO 2interface recombination currents were found to be correlated with the SDR response. The correlation between the recombination current peak and SDR peak showed that the SDR defect was a dominating deep-level trap at the SiC/SiO 2 interface.

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U2 - 10.1063/1.1723693

DO - 10.1063/1.1723693

M3 - Article

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EP - 3408

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Structure of 6H silicon carbide/silicon dioxide interface trapping defects

Abstract

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