Structure of 6H silicon carbide/silicon dioxide interface trapping defects

The deep level trap defects at the interface of 6H silicon carbide and the SiO ₂ gate dielectric in SiC metal-oxide-semiconductor field effect transistors were discussed. The trapping defects on the interface were observed using spin-dependent recombination (SDR) technique. The SiC/SiO ₂interface recombination currents were found to be correlated with the SDR response. The correlation between the recombination current peak and SDR peak showed that the SDR defect was a dominating deep-level trap at the SiC/SiO ₂ interface.