Structure study of bulk nanograined thermoelectric bismuth antimony telluride

Yucheng Lan; Bed Poudel; Yi Ma; Dezhi Wang; Mildred S. Dresselhaus; Gang Chen; Zhifeng Ren

doi:10.1021/nl803235n

Structure study of bulk nanograined thermoelectric bismuth antimony telluride

Yucheng Lan, Bed Poudel, Yi Ma, Dezhi Wang, Mildred S. Dresselhaus, Gang Chen, Zhifeng Ren

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

240 Scopus citations

Abstract

The microstructures of bulk nanograined p-type bismuth antimony telluride with a thermoelectric dimensionless figure-of-merit ZT = 1.4 are investigated using transmission electron microscopy. It is found that the bulk material contains both nano- and microsized grains. Between the nanograms, bismuth-rich interface regions with a 4 nm thickness were detected. In addition, nanoprecipitates as well as other defects are also found to be embedded in the nanograms. The high ZT is attributed to the slight increase in the electrical conductivity, and to the large decrease of the thermal conductivity.

Original language	English (US)
Pages (from-to)	1419-1422
Number of pages	4
Journal	Nano letters
Volume	9
Issue number	4
DOIs	https://doi.org/10.1021/nl803235n
State	Published - Apr 8 2009

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl803235n

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abstract = "The microstructures of bulk nanograined p-type bismuth antimony telluride with a thermoelectric dimensionless figure-of-merit ZT = 1.4 are investigated using transmission electron microscopy. It is found that the bulk material contains both nano- and microsized grains. Between the nanograms, bismuth-rich interface regions with a 4 nm thickness were detected. In addition, nanoprecipitates as well as other defects are also found to be embedded in the nanograms. The high ZT is attributed to the slight increase in the electrical conductivity, and to the large decrease of the thermal conductivity.",

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T1 - Structure study of bulk nanograined thermoelectric bismuth antimony telluride

AU - Lan, Yucheng

AU - Poudel, Bed

AU - Ma, Yi

AU - Wang, Dezhi

AU - Dresselhaus, Mildred S.

AU - Chen, Gang

AU - Ren, Zhifeng

PY - 2009/4/8

Y1 - 2009/4/8

N2 - The microstructures of bulk nanograined p-type bismuth antimony telluride with a thermoelectric dimensionless figure-of-merit ZT = 1.4 are investigated using transmission electron microscopy. It is found that the bulk material contains both nano- and microsized grains. Between the nanograms, bismuth-rich interface regions with a 4 nm thickness were detected. In addition, nanoprecipitates as well as other defects are also found to be embedded in the nanograms. The high ZT is attributed to the slight increase in the electrical conductivity, and to the large decrease of the thermal conductivity.

AB - The microstructures of bulk nanograined p-type bismuth antimony telluride with a thermoelectric dimensionless figure-of-merit ZT = 1.4 are investigated using transmission electron microscopy. It is found that the bulk material contains both nano- and microsized grains. Between the nanograms, bismuth-rich interface regions with a 4 nm thickness were detected. In addition, nanoprecipitates as well as other defects are also found to be embedded in the nanograms. The high ZT is attributed to the slight increase in the electrical conductivity, and to the large decrease of the thermal conductivity.

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JO - Nano letters

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Structure study of bulk nanograined thermoelectric bismuth antimony telluride

Abstract

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