@inproceedings{2bb5d5517c824c83b51fb5f428acf740,
title = "Studies of AC BTI Stress in 4H SiC MOSFETs",
abstract = "We have performed bipolar AC stress on commercially available 4H polytype silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). We observed threshold voltage and subthreshold swing (SS) instabilities that are dependent on stress signal frequency and amplitudes. The dependencies are explained in terms of carrier emission/capture in stress induced interfacial traps.",
author = "Ghosh, {Amartya K.} and Awadelkarim, {Osama O.} and Jifa Hao",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Integrated Reliability Workshop, IIRW 2021 ; Conference date: 04-10-2021 Through 28-10-2021",
year = "2021",
doi = "10.1109/IIRW53245.2021.9635608",
language = "English (US)",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Integrated Reliability Workshop, IIRW 2021",
address = "United States",
}