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Studies of AC BTI Stress in 4H SiC MOSFETs
Amartya K. Ghosh
,
Osama O. Awadelkarim
, Jifa Hao
Engineering Science and Mechanics
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
9
Scopus citations
Overview
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Dive into the research topics of 'Studies of AC BTI Stress in 4H SiC MOSFETs'. Together they form a unique fingerprint.
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Keyphrases
MOSFET
100%
4H-SiC
100%
Carbide Metal
100%
Commercially Available
50%
Stress-induced
50%
Interfacial Traps
50%
Stress Signaling
50%
Threshold Voltage
50%
Subthreshold Swing
50%
Voltage Swing
50%
Silicon Carbide
50%
Signal Amplitude
50%
Signal Frequency
50%
AC Stress
50%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Induced Stress
50%
Polytypes
50%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Silicon Carbide
100%