TY - GEN
T1 - Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs
AU - Ghosh, Amartya
AU - Hao, Jifa
AU - Cook, Michael
AU - Kendrick, Chris
AU - Suliman, Samia A.
AU - Hall, Gavin D.R.
AU - Kopley, Tom
AU - Awadelkarim, Osama O.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the change in threshold voltage (Vth) can be attributed to charge carrier trapping/de-trapping at border traps, while interface trapped charge density is found to be unaffected. The fast measurements, however, shows significant Vth recovery taking place in-situ during measurement. Moreover, Vth shift is observed to decrease with increasing temperature for the same stress level suggesting that Vth recovery is temperature activated.
AB - Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the change in threshold voltage (Vth) can be attributed to charge carrier trapping/de-trapping at border traps, while interface trapped charge density is found to be unaffected. The fast measurements, however, shows significant Vth recovery taking place in-situ during measurement. Moreover, Vth shift is observed to decrease with increasing temperature for the same stress level suggesting that Vth recovery is temperature activated.
UR - https://www.scopus.com/pages/publications/85088386917
UR - https://www.scopus.com/pages/publications/85088386917#tab=citedBy
U2 - 10.1109/IRPS45951.2020.9128318
DO - 10.1109/IRPS45951.2020.9128318
M3 - Conference contribution
AN - SCOPUS:85088386917
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -