Studies of double-sided, double metal silicon strip detectors

J. P. Alexander, C. J. Bebek, T. E. Browder, J. A. Dobbins, S. G. Gray, K. Honscheid, C. D. Jones, N. Katayama, J. S. Katris, M. Selen, F. Würthwein, J. Gronberg, R. J. Morrison, D. L. Hale, C. Korte, S. Kyre, H. N. Nelson, T. K. Nelson, C. Qiao, D. J. SperkaH. Tajima, D. Cinabro, S. Henderson, H. Yamamoto, M. Artuso, Z. Sobolewski, S. Chan, D. F. Cowen, J. S. Miller, R. Balest

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have studied double-sided, double-metal silicon microstrip detectors for the CLEO-II vertex detector. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors are manufactured by Hamamatsu Photonics. They are full size AC coupled detectors with polysilicon bias resistors on the n-side and punchthrough biasing on the p-side. We present measurements of detector static properties, including the extra capacitance due to the double layer structure, as well as measurements of signal and noise.

Original languageEnglish (US)
Pages (from-to)282-286
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, A
Issue number1
StatePublished - Mar 15 1994

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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