Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

K. Chang; K. Shanmugasundaram; J. Shallenberger; J. Ruzyllo

doi:10.1016/j.tsf.2006.09.048

Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

K. Chang, K. Shanmugasundaram, J. Shallenberger, J. Ruzyllo

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiO_x film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiO_x film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiO_x the equivalent oxide thickness value of the Pt-HfSiO_x-Si gate stack was decreasing and leakage current maintained lower than that of HfO₂ at the similar physical thickness.

Original language	English (US)
Pages (from-to)	3802-3805
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	7-8
DOIs	https://doi.org/10.1016/j.tsf.2006.09.048
State	Published - Feb 26 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Metals and Alloys
Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/j.tsf.2006.09.048

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title = "Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications",

abstract = "The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.",

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T1 - Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

AU - Chang, K.

AU - Shanmugasundaram, K.

AU - Shallenberger, J.

AU - Ruzyllo, J.

PY - 2007/2/26

Y1 - 2007/2/26

N2 - The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.

AB - The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.

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M3 - Article

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JO - Thin Solid Films

JF - Thin Solid Films

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Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

Abstract

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