Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

K. Chang, K. Shanmugasundaram, J. Shallenberger, J. Ruzyllo

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.

Original languageEnglish (US)
Pages (from-to)3802-3805
Number of pages4
JournalThin Solid Films
Issue number7-8
StatePublished - Feb 26 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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