Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures

J. Ruzyllo; D. O. Lee; P. Roman; M. Horn; P. Mumbauer; M. Brubaker; R. Grant

doi:10.1109/ASMC.2001.925619

Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures

J. Ruzyllo
, D. O. Lee
, P. Roman
, M. Horn
, P. Mumbauer
, M. Brubaker
, R. Grant

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper reviews results of an investigation of electrical characteristics and selected fundamental material properties of several high-k metal oxides considered for MOS gate applications. The metal oxide films were deposited using the LSMCD (Liquid Source Misted Chemical Deposition) method in a cluster tool. The method produces high quality films as thin as 3 nm and offers the flexibility of switching between various chemistries. Among compositions studied mist-deposited oxides of Hf and Zr as well as SrTa₂O₆ were found to display promising characteristics for MOS gate applications with the last showing superior thermal stability with silicon.

Original language	English (US)
Pages (from-to)	71-75
Number of pages	5
Journal	IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
Volume	2
DOIs	https://doi.org/10.1109/ASMC.2001.925619
State	Published - 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Engineering
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

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10.1109/ASMC.2001.925619

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title = "Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures",

abstract = "This paper reviews results of an investigation of electrical characteristics and selected fundamental material properties of several high-k metal oxides considered for MOS gate applications. The metal oxide films were deposited using the LSMCD (Liquid Source Misted Chemical Deposition) method in a cluster tool. The method produces high quality films as thin as 3 nm and offers the flexibility of switching between various chemistries. Among compositions studied mist-deposited oxides of Hf and Zr as well as SrTa2O6 were found to display promising characteristics for MOS gate applications with the last showing superior thermal stability with silicon.",

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doi = "10.1109/ASMC.2001.925619",

language = "English (US)",

volume = "2",

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T1 - Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures

AU - Ruzyllo, J.

AU - Lee, D. O.

AU - Roman, P.

AU - Horn, M.

AU - Mumbauer, P.

AU - Brubaker, M.

AU - Grant, R.

PY - 2001

Y1 - 2001

N2 - This paper reviews results of an investigation of electrical characteristics and selected fundamental material properties of several high-k metal oxides considered for MOS gate applications. The metal oxide films were deposited using the LSMCD (Liquid Source Misted Chemical Deposition) method in a cluster tool. The method produces high quality films as thin as 3 nm and offers the flexibility of switching between various chemistries. Among compositions studied mist-deposited oxides of Hf and Zr as well as SrTa2O6 were found to display promising characteristics for MOS gate applications with the last showing superior thermal stability with silicon.

AB - This paper reviews results of an investigation of electrical characteristics and selected fundamental material properties of several high-k metal oxides considered for MOS gate applications. The metal oxide films were deposited using the LSMCD (Liquid Source Misted Chemical Deposition) method in a cluster tool. The method produces high quality films as thin as 3 nm and offers the flexibility of switching between various chemistries. Among compositions studied mist-deposited oxides of Hf and Zr as well as SrTa2O6 were found to display promising characteristics for MOS gate applications with the last showing superior thermal stability with silicon.

UR - https://www.scopus.com/pages/publications/0035182661

UR - https://www.scopus.com/pages/publications/0035182661#tab=citedBy

U2 - 10.1109/ASMC.2001.925619

DO - 10.1109/ASMC.2001.925619

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SN - 1523-553X

VL - 2

SP - 71

EP - 75

JO - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

JF - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

ER -

Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures

Abstract

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