Studies of mist deposited high-k dielectrics for MOS gates

D. O. Lee, P. Roman, C. T. Wu, W. Mahoney, M. Horn, P. Mumbauer, M. Brubaker, R. Grant, J. Ruzyllo

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition (LSMCD) in a cluster tool for advanced MOS gates. Electrical characterization (capacitance-voltage and current-voltage) was performed in conjunction with atomic force microscopy (AFM). The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated, the sequence depositing high-k dielectric, e.g. SrTa2O6, on nitrided oxide interlayer grown by a UV/NO process showed very good promise.

Original languageEnglish (US)
Pages (from-to)405-408
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Nov 2001
Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
Duration: Jun 20 2001Jun 23 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


Dive into the research topics of 'Studies of mist deposited high-k dielectrics for MOS gates'. Together they form a unique fingerprint.

Cite this