Studies of mist deposited high-k dielectrics for MOS gates

D. O. Lee; P. Roman; C. T. Wu; W. Mahoney; M. Horn; P. Mumbauer; M. Brubaker; R. Grant; J. Ruzyllo

doi:10.1016/S0167-9317(01)00676-1

Studies of mist deposited high-k dielectrics for MOS gates

D. O. Lee
, P. Roman
, C. T. Wu
, W. Mahoney
, M. Horn
, P. Mumbauer
, M. Brubaker
, R. Grant
, J. Ruzyllo

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition (LSMCD) in a cluster tool for advanced MOS gates. Electrical characterization (capacitance-voltage and current-voltage) was performed in conjunction with atomic force microscopy (AFM). The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated, the sequence depositing high-k dielectric, e.g. SrTa₂O₆, on nitrided oxide interlayer grown by a UV/NO process showed very good promise.

Original language	English (US)
Pages (from-to)	405-408
Number of pages	4
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00676-1
State	Published - Nov 2001
Event	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy Duration: Jun 20 2001 → Jun 23 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(01)00676-1

Cite this

@article{23064232d0cf4aa9813a9d6598db9ac0,

title = "Studies of mist deposited high-k dielectrics for MOS gates",

abstract = "This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition (LSMCD) in a cluster tool for advanced MOS gates. Electrical characterization (capacitance-voltage and current-voltage) was performed in conjunction with atomic force microscopy (AFM). The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated, the sequence depositing high-k dielectric, e.g. SrTa2O6, on nitrided oxide interlayer grown by a UV/NO process showed very good promise.",

author = "Lee, \{D. O.\} and P. Roman and Wu, \{C. T.\} and W. Mahoney and M. Horn and P. Mumbauer and M. Brubaker and R. Grant and J. Ruzyllo",

year = "2001",

month = nov,

doi = "10.1016/S0167-9317(01)00676-1",

language = "English (US)",

volume = "59",

pages = "405--408",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

note = "12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) ; Conference date: 20-06-2001 Through 23-06-2001",

}

TY - JOUR

T1 - Studies of mist deposited high-k dielectrics for MOS gates

AU - Lee, D. O.

AU - Roman, P.

AU - Wu, C. T.

AU - Mahoney, W.

AU - Horn, M.

AU - Mumbauer, P.

AU - Brubaker, M.

AU - Grant, R.

AU - Ruzyllo, J.

PY - 2001/11

Y1 - 2001/11

N2 - This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition (LSMCD) in a cluster tool for advanced MOS gates. Electrical characterization (capacitance-voltage and current-voltage) was performed in conjunction with atomic force microscopy (AFM). The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated, the sequence depositing high-k dielectric, e.g. SrTa2O6, on nitrided oxide interlayer grown by a UV/NO process showed very good promise.

AB - This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition (LSMCD) in a cluster tool for advanced MOS gates. Electrical characterization (capacitance-voltage and current-voltage) was performed in conjunction with atomic force microscopy (AFM). The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated, the sequence depositing high-k dielectric, e.g. SrTa2O6, on nitrided oxide interlayer grown by a UV/NO process showed very good promise.

UR - https://www.scopus.com/pages/publications/0035498680

UR - https://www.scopus.com/pages/publications/0035498680#tab=citedBy

U2 - 10.1016/S0167-9317(01)00676-1

DO - 10.1016/S0167-9317(01)00676-1

M3 - Conference article

AN - SCOPUS:0035498680

SN - 0167-9317

VL - 59

SP - 405

EP - 408

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001)

Y2 - 20 June 2001 through 23 June 2001

ER -

Studies of mist deposited high-k dielectrics for MOS gates

Abstract

All Science Journal Classification (ASJC) codes

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