Study of device instability of bottom-gate ZnO transistors with sol-gel derived channel layers

Keyphrases

• Transistor 100%
• Sol-gel 100%
• Ambient Conditions 100%
• Vacuum Condition 100%
• Oxygen Adsorption 100%
• Bottom Gate 100%
• Defect Creation 100%
• Device Instability 100%
• Channel Layer 100%
• Grain Boundary 50%
• Chemisorbed 50%
• Water Molecule 50%
• Electrical Characteristics 50%
• Field-effect Mobility 50%
• Active Layer 50%
• Model Fitting 50%
• Oxygen Molecule 50%
• Moisture 50%
• Water Adsorption 50%
• Power-law Model 50%
• Electrical Stress 50%
• Gate Bias 50%
• Systematic Comparison 50%
• Subthreshold Swing 50%
• ZnO Thin Film Transistor 50%
• ZnO Thin Films 50%
• Semiconductor-dielectric Interface 50%
• Bias Stress 50%
• Threshold Voltage Shift 50%
• Moisture Adsorption 50%
• Instability of Solution 50%
• Stretched Exponential Law 50%

Material Science

• Transistor 100%
• Sol-Gel 100%
• ZnO 100%
• Thin Films 33%
• Thin-Film Transistor 33%
• Electrical Property 33%
• Charge Trapping 33%
• Dielectric-Semiconductor Interface 33%
• Grain Boundary 33%

Engineering

• Channel Layer 100%
• Thin Films 50%
• Dielectrics 50%
• Gate Bias 50%
• Power Law Model 50%
• Thin-Film Transistor 50%
• Active Layer 50%
• under-Relaxation 50%