Keyphrases
A-Si
100%
Light-emitting Heterostructure
100%
Thermally Activated Processes
42%
Bias Stress
42%
Thermal Bias
42%
Heterostructure
28%
High Temperature
28%
Activation Energy
28%
N-Si
28%
Low Temperature
14%
Band Gap
14%
Capacitance-voltage
14%
Capacitance-voltage Measurements
14%
Hole Trapping
14%
Electron Traps
14%
Amorphous Matrix
14%
Electroluminescence
14%
Crystalline-amorphous
14%
Temperature Bias
14%
Er Doping
14%
Positive Bias
14%
Visible Light Illumination
14%
Capacitance Spectroscopy
14%
Light Emitters
14%
Electrical Parameters
14%
Electron-hole Recombination
14%
Charging Temperature
14%
Current Peak
14%
Hydrogenated Amorphous Silicon Films
14%
Light Bias
14%
Engineering
Heterostructures
100%
Related Defect
100%
Emitting Light
100%
Defects
66%
Deep Level
66%
Activation Energy
66%
Low-Temperature
33%
Energy Gap
33%
Hydrogenated Amorphous Silicon
33%
Substrate Bias
33%
Charging Temperature
33%
Er Concentration
33%
Amorphous Matrix
33%
Material Science
Film
100%
Heterojunction
100%
Capacitance
75%
Amorphous Material
50%
Activation Energy
50%
Crystalline Material
25%
Amorphous Silicon
25%
Electroluminescence
25%
Physics
Activation Energy
100%
Amorphous Silicon
50%
Holes (Electron Deficiencies)
50%
Visible Spectrum
50%
Electroluminescence
50%
Capacitance-Voltage Characteristics
50%