Study of interface trap density of AlOxNy/GaN MOS structures

Jianan Song, Sang Woo Han, Haoting Luo, Jaime Rumsey, Jacob H. Leach, Rongming Chu

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GaN metal-oxide-semiconductor structures were fabricated by atomic layer deposition of aluminum oxynitride thin films on bulk GaN substrates with c-, a-, and m-plane surfaces. Capacitance-voltage measurements ranging from 5 kHz to 1 MHz were conducted at room temperature. The interface trap number density (Nit) and interface trap level density (Dit) of the devices were extracted. A Nit of less than 2 × 1011 cm−2 and a Dit of less than 2 × 1011 cm−2 eV−1 were obtained on the a-plane and m-plane samples. Nit and Dit values were larger for c-plane samples, with the largest interface trap density observed on the c-plane sample with the highest dislocation density. The different Nit and Dit values can be attributed to different dislocation densities and dangling bond densities among different samples.

Original languageEnglish (US)
Article number122105
JournalApplied Physics Letters
Issue number12
StatePublished - Sep 20 2021

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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