Study of planar MgB2/TiB2/MgB2 Josephson junctions using the proximity effect SNS model

Ke Chen; Y. Cui; Qi Li; X. X. Xi

doi:10.1109/TASC.2007.898108

Study of planar MgB₂/TiB₂/MgB₂ Josephson junctions using the proximity effect SNS model

Ke Chen
, Y. Cui
, Qi Li
, X. X. Xi

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Planar MgB₂/TiB₂/MgB₂ junctions were fabricated by locally removing MgB₂ within a gap of ≤ 50 nm on a bilayer film of MgB₂/TiB₂ on SiC substrate using focused ion beam (FIB). Junctions with gaps of different depths were studied. We found that when the gap is too shallow the junction shows a flux-flow behavior, while a too deep gap will result In a junction with no supercurrent. Only junctions with the right gap depth exhibit good resistively-shunted-junction (RSJ) like current-voltage characteristics and excellent ac Josephson effect. The junctions' behavior can be described by the proximity effect superconductor-normal metal-superconductor (SNS) model, suggesting that the Josephson coupling is through the proximity effect in the metallic TiB ₂ layer.

Original language	English (US)
Pages (from-to)	955-958
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/TASC.2007.898108
State	Published - Jun 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TASC.2007.898108

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title = "Study of planar MgB2/TiB2/MgB2 Josephson junctions using the proximity effect SNS model",

abstract = "Planar MgB2/TiB2/MgB2 junctions were fabricated by locally removing MgB2 within a gap of ≤ 50 nm on a bilayer film of MgB2/TiB2 on SiC substrate using focused ion beam (FIB). Junctions with gaps of different depths were studied. We found that when the gap is too shallow the junction shows a flux-flow behavior, while a too deep gap will result In a junction with no supercurrent. Only junctions with the right gap depth exhibit good resistively-shunted-junction (RSJ) like current-voltage characteristics and excellent ac Josephson effect. The junctions' behavior can be described by the proximity effect superconductor-normal metal-superconductor (SNS) model, suggesting that the Josephson coupling is through the proximity effect in the metallic TiB 2 layer.",

author = "Ke Chen and Y. Cui and Qi Li and Xi, \{X. X.\}",

note = "Funding Information: Manuscript received August 27, 2006. The work of X. X. Xi was supported by ONR under Grant N00014-00-1-0294 and by NSF under Grant DMR-0306746. The work of Q. Li was supported by NSF under Grant DMR-0405502. K. Chen, Y. Cui, and Q. Li are with the Department of Physics, The Pennsylvania University, University Park, PA 16802 USA (e-mail: [email protected]). X. X. Xi is with the Department of Physics and the Department of Materials Science and Engineering, The Pennsylvania University, University Park, PA 16802 USA. Digital Object Identifier 10.1109/TASC.2007.898108",

year = "2007",

month = jun,

doi = "10.1109/TASC.2007.898108",

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AU - Chen, Ke

AU - Cui, Y.

AU - Li, Qi

AU - Xi, X. X.

N1 - Funding Information: Manuscript received August 27, 2006. The work of X. X. Xi was supported by ONR under Grant N00014-00-1-0294 and by NSF under Grant DMR-0306746. The work of Q. Li was supported by NSF under Grant DMR-0405502. K. Chen, Y. Cui, and Q. Li are with the Department of Physics, The Pennsylvania University, University Park, PA 16802 USA (e-mail: [email protected]). X. X. Xi is with the Department of Physics and the Department of Materials Science and Engineering, The Pennsylvania University, University Park, PA 16802 USA. Digital Object Identifier 10.1109/TASC.2007.898108

PY - 2007/6

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N2 - Planar MgB2/TiB2/MgB2 junctions were fabricated by locally removing MgB2 within a gap of ≤ 50 nm on a bilayer film of MgB2/TiB2 on SiC substrate using focused ion beam (FIB). Junctions with gaps of different depths were studied. We found that when the gap is too shallow the junction shows a flux-flow behavior, while a too deep gap will result In a junction with no supercurrent. Only junctions with the right gap depth exhibit good resistively-shunted-junction (RSJ) like current-voltage characteristics and excellent ac Josephson effect. The junctions' behavior can be described by the proximity effect superconductor-normal metal-superconductor (SNS) model, suggesting that the Josephson coupling is through the proximity effect in the metallic TiB 2 layer.

AB - Planar MgB2/TiB2/MgB2 junctions were fabricated by locally removing MgB2 within a gap of ≤ 50 nm on a bilayer film of MgB2/TiB2 on SiC substrate using focused ion beam (FIB). Junctions with gaps of different depths were studied. We found that when the gap is too shallow the junction shows a flux-flow behavior, while a too deep gap will result In a junction with no supercurrent. Only junctions with the right gap depth exhibit good resistively-shunted-junction (RSJ) like current-voltage characteristics and excellent ac Josephson effect. The junctions' behavior can be described by the proximity effect superconductor-normal metal-superconductor (SNS) model, suggesting that the Josephson coupling is through the proximity effect in the metallic TiB 2 layer.

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Study of planar MgB₂/TiB₂/MgB₂ Josephson junctions using the proximity effect SNS model

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