Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

K. Chang; K. Shanmugasundaram; D. O. Lee; P. Roman; Jeffrey Shallenberger; F. M. Chang; J. Wang; P. Mumbauer; R. Grant; R. Beck; Jerzy Ruzyllo

Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

K. Chang, K. Shanmugasundaram, D. O. Lee, P. Roman, Jeffrey Shallenberger, F. M. Chang, J. Wang, P. Mumbauer, R. Grant, R. Beck, Jerzy Ruzyllo

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO₄) are investigated. Two different HfSiO₄ precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.

Original language	English (US)
Pages	78-85
Number of pages	8
State	Published - Dec 1 2003
Event	Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003

Other

Other	Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium
Country/Territory	United States
City	Orlando, FL.
Period	10/12/03 → 10/17/03

All Science Journal Classification (ASJC) codes

General Engineering

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Chang, K., Shanmugasundaram, K., Lee, D. O., Roman, P., Shallenberger, J., Chang, F. M., Wang, J., Mumbauer, P., Grant, R., Beck, R., & Ruzyllo, J. (2003). Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks. 78-85. Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium, Orlando, FL., United States.

@conference{de789a6f80884b7fa99ab793f1779674,

title = "Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks",

abstract = "In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO4) are investigated. Two different HfSiO4 precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.",

author = "K. Chang and K. Shanmugasundaram and Lee, {D. O.} and P. Roman and Jeffrey Shallenberger and Chang, {F. M.} and J. Wang and P. Mumbauer and R. Grant and R. Beck and Jerzy Ruzyllo",

year = "2003",

month = dec,

day = "1",

language = "English (US)",

pages = "78--85",

note = "Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Chang, K, Shanmugasundaram, K, Lee, DO, Roman, P, Shallenberger, J, Chang, FM, Wang, J, Mumbauer, P, Grant, R, Beck, R & Ruzyllo, J 2003, 'Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks', Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium, Orlando, FL., United States, 10/12/03 - 10/17/03 pp. 78-85.

Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks. / Chang, K.; Shanmugasundaram, K.; Lee, D. O. et al.
2003. 78-85 Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium, Orlando, FL., United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

AU - Chang, K.

AU - Shanmugasundaram, K.

AU - Lee, D. O.

AU - Roman, P.

AU - Shallenberger, Jeffrey

AU - Chang, F. M.

AU - Wang, J.

AU - Mumbauer, P.

AU - Grant, R.

AU - Beck, R.

AU - Ruzyllo, Jerzy

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO4) are investigated. Two different HfSiO4 precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.

AB - In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO4) are investigated. Two different HfSiO4 precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.

UR - http://www.scopus.com/inward/record.url?scp=3042832346&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042832346&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:3042832346

SP - 78

EP - 85

T2 - Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

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