Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

K. Chang; K. Shanmugasundaram; D. O. Lee; P. Roman; Jeffrey Shallenberger; F. M. Chang; J. Wang; P. Mumbauer; R. Grant; R. Beck; Jerzy Ruzyllo

Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

K. Chang
, K. Shanmugasundaram
, D. O. Lee
, P. Roman
, Jeffrey Shallenberger
, F. M. Chang
, J. Wang
, P. Mumbauer
, R. Grant
, R. Beck
, Jerzy Ruzyllo

Research output: Contribution to conference › Paper › peer-review

Abstract

In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO₄) are investigated. Two different HfSiO₄ precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.

Original language	English (US)
Pages	78-85
Number of pages	8
State	Published - Dec 1 2003
Event	Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003

Other

Other	Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium
Country/Territory	United States
City	Orlando, FL.
Period	10/12/03 → 10/17/03

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Chang, K., Shanmugasundaram, K., Lee, D. O., Roman, P., Shallenberger, J., Chang, F. M., Wang, J., Mumbauer, P., Grant, R., Beck, R., & Ruzyllo, J. (2003). Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks. 78-85. Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium, Orlando, FL., United States.

@conference{de789a6f80884b7fa99ab793f1779674,

title = "Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks",

abstract = "In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO4) are investigated. Two different HfSiO4 precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.",

author = "K. Chang and K. Shanmugasundaram and Lee, \{D. O.\} and P. Roman and Jeffrey Shallenberger and Chang, \{F. M.\} and J. Wang and P. Mumbauer and R. Grant and R. Beck and Jerzy Ruzyllo",

year = "2003",

month = dec,

day = "1",

language = "English (US)",

pages = "78--85",

note = "Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Chang, K, Shanmugasundaram, K, Lee, DO, Roman, P, Shallenberger, J, Chang, FM, Wang, J, Mumbauer, P, Grant, R, Beck, R & Ruzyllo, J 2003, 'Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks', Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium, Orlando, FL., United States, 10/12/03 - 10/17/03 pp. 78-85.

Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks. / Chang, K.; Shanmugasundaram, K.; Lee, D. O. et al.
2003. 78-85 Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium, Orlando, FL., United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

AU - Chang, K.

AU - Shanmugasundaram, K.

AU - Lee, D. O.

AU - Roman, P.

AU - Shallenberger, Jeffrey

AU - Chang, F. M.

AU - Wang, J.

AU - Mumbauer, P.

AU - Grant, R.

AU - Beck, R.

AU - Ruzyllo, Jerzy

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO4) are investigated. Two different HfSiO4 precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.

AB - In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO4) are investigated. Two different HfSiO4 precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.

UR - https://www.scopus.com/pages/publications/3042832346

UR - https://www.scopus.com/pages/publications/3042832346#tab=citedBy

M3 - Paper

AN - SCOPUS:3042832346

SP - 78

EP - 85

T2 - Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

Abstract

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All Science Journal Classification (ASJC) codes

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