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Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks
K. Chang, K. Shanmugasundaram, D. O. Lee, P. Roman, Jeffrey Shallenberger, F. M. Chang, J. Wang, P. Mumbauer, R. Grant, R. Beck, Jerzy Ruzyllo
Research output: Contribution to conference › Paper › peer-review
3
Scopus
citations