Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

K. Chang, K. Shanmugasundaram, D. O. Lee, P. Roman, Jeffrey Shallenberger, F. M. Chang, J. Wang, P. Mumbauer, R. Grant, R. Beck, Jerzy Ruzyllo

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

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Engineering & Materials Science