Study of the growth mechanism and properties of InN films grown by MOCVD

Abhishek Jain; Joan M. Redwing

doi:10.1557/proc-798-y12.8

Study of the growth mechanism and properties of InN films grown by MOCVD

Research output: Contribution to journal › Conference article › peer-review

Abstract

Thin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40Å) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60Å. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm²/Vs and an electron concentration of 2.1×l0¹⁹ cm^-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.

Original language	English (US)
Pages (from-to)	225-230
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	798
DOIs	https://doi.org/10.1557/proc-798-y12.8
State	Published - Jan 1 2003
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Study of the growth mechanism and properties of InN films grown by MOCVD",

abstract = "Thin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40{\AA}) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60{\AA}. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm2/Vs and an electron concentration of 2.1×l019 cm-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.",

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T1 - Study of the growth mechanism and properties of InN films grown by MOCVD

AU - Jain, Abhishek

AU - Redwing, Joan M.

PY - 2003/1/1

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N2 - Thin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40Å) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60Å. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm2/Vs and an electron concentration of 2.1×l019 cm-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.

AB - Thin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40Å) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60Å. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm2/Vs and an electron concentration of 2.1×l019 cm-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.

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JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -

Study of the growth mechanism and properties of InN films grown by MOCVD

Abstract

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