Study on the AlN/Si(1 1 1) interface properties

D. J. Xi; Y. D. Zheng; P. Chen; R. M. Chu; S. L. Gu; B. Shen; R. Zhang

doi:10.1016/S0925-3467(03)00076-4

Study on the AlN/Si(1 1 1) interface properties

D. J. Xi, Y. D. Zheng, P. Chen, R. M. Chu, S. L. Gu, B. Shen, R. Zhang

Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

In this paper, Al/AlN/Si(111) metal-insulator-semiconductor (MIS) structure has been fabricated and their interfacial properties have been investigated using capacitance-voltage techniques. The dielectric constant of AlN was found to vary from 5.01 to 8.67 with the frequency decreasing from 1 MHz to 50 Hz due to the existance of a transition zone between AlN and Si substrate which is not forbidden to the electronics. The distribution of the interface states in the interface was extracted from the frequency-dependent capacitance-voltage characteristics of the MIS structure. The interface state density D_it in the silicon forbidden band gap was in the order of 10¹² eV^-1 cm^-2 and the time constant was about 10^-5 s through analyzing the capacitance as a function of frequency.

Original language	English (US)
Pages (from-to)	143-146
Number of pages	4
Journal	Optical Materials
Volume	23
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(03)00076-4
State	Published - 2003
Event	Proceedings of the 8th ICEM 2002 - XI'an, China Duration: Jun 10 2002 → Jun 14 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-3467(03)00076-4

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@article{c5e6e6dc766b40718f63fab04e31a293,

title = "Study on the AlN/Si(1 1 1) interface properties",

abstract = "In this paper, Al/AlN/Si(111) metal-insulator-semiconductor (MIS) structure has been fabricated and their interfacial properties have been investigated using capacitance-voltage techniques. The dielectric constant of AlN was found to vary from 5.01 to 8.67 with the frequency decreasing from 1 MHz to 50 Hz due to the existance of a transition zone between AlN and Si substrate which is not forbidden to the electronics. The distribution of the interface states in the interface was extracted from the frequency-dependent capacitance-voltage characteristics of the MIS structure. The interface state density Dit in the silicon forbidden band gap was in the order of 1012 eV-1 cm-2 and the time constant was about 10-5 s through analyzing the capacitance as a function of frequency.",

author = "Xi, {D. J.} and Zheng, {Y. D.} and P. Chen and Chu, {R. M.} and Gu, {S. L.} and B. Shen and R. Zhang",

note = "Funding Information: This work is supported by Special Funds for major state Basic Research Project G20000683 and the National Natural Science Foundation of China (No. 69987001, No. 60136020). ; Proceedings of the 8th ICEM 2002 ; Conference date: 10-06-2002 Through 14-06-2002",

year = "2003",

doi = "10.1016/S0925-3467(03)00076-4",

language = "English (US)",

volume = "23",

pages = "143--146",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Study on the AlN/Si(1 1 1) interface properties

AU - Xi, D. J.

AU - Zheng, Y. D.

AU - Chen, P.

AU - Chu, R. M.

AU - Gu, S. L.

AU - Shen, B.

AU - Zhang, R.

N1 - Funding Information: This work is supported by Special Funds for major state Basic Research Project G20000683 and the National Natural Science Foundation of China (No. 69987001, No. 60136020).

PY - 2003

Y1 - 2003

N2 - In this paper, Al/AlN/Si(111) metal-insulator-semiconductor (MIS) structure has been fabricated and their interfacial properties have been investigated using capacitance-voltage techniques. The dielectric constant of AlN was found to vary from 5.01 to 8.67 with the frequency decreasing from 1 MHz to 50 Hz due to the existance of a transition zone between AlN and Si substrate which is not forbidden to the electronics. The distribution of the interface states in the interface was extracted from the frequency-dependent capacitance-voltage characteristics of the MIS structure. The interface state density Dit in the silicon forbidden band gap was in the order of 1012 eV-1 cm-2 and the time constant was about 10-5 s through analyzing the capacitance as a function of frequency.

AB - In this paper, Al/AlN/Si(111) metal-insulator-semiconductor (MIS) structure has been fabricated and their interfacial properties have been investigated using capacitance-voltage techniques. The dielectric constant of AlN was found to vary from 5.01 to 8.67 with the frequency decreasing from 1 MHz to 50 Hz due to the existance of a transition zone between AlN and Si substrate which is not forbidden to the electronics. The distribution of the interface states in the interface was extracted from the frequency-dependent capacitance-voltage characteristics of the MIS structure. The interface state density Dit in the silicon forbidden band gap was in the order of 1012 eV-1 cm-2 and the time constant was about 10-5 s through analyzing the capacitance as a function of frequency.

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U2 - 10.1016/S0925-3467(03)00076-4

DO - 10.1016/S0925-3467(03)00076-4

M3 - Conference article

AN - SCOPUS:0038348680

SN - 0925-3467

VL - 23

SP - 143

EP - 146

JO - Optical Materials

JF - Optical Materials

IS - 1-2

T2 - Proceedings of the 8th ICEM 2002

Y2 - 10 June 2002 through 14 June 2002

ER -

Study on the AlN/Si(1 1 1) interface properties

Abstract

All Science Journal Classification (ASJC) codes

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