TY - JOUR
T1 - Study on the behavior of atomic layer deposition coatings on a nickel substrate at high temperature
AU - Heidary, Damoon Sohrabi Baba
AU - Randall, Clive A.
N1 - Funding Information:
This material is based upon work supported by the National Science Foundation, as part of the Center for Dielectric Studies under Grant Nos. IIP-1361503 and 1361571. The authors would like to acknowledge Ms Joanne Aller at Materials Research Institute of the Pennsylvania State University for her support in the writing process of this paper.
PY - 2016/5/6
Y1 - 2016/5/6
N2 - Although many techniques have been applied to protect nickel (Ni) alloys from oxidation at intermediate and high temperatures, the potential of atomic layer deposition (ALD) coatings has not been fully explored. In this paper, the application of ALD coatings (HfO2, Al2O3, SnO2, and ZnO) on Ni foils has been evaluated by electrical characterization and transmission electron microscopy analyses in order to assess their merit to increase Ni oxidation resistance; particular consideration was given to preserving Ni electrical conductivity at high temperatures. The results suggested that as long as the temperature was below 850 °C, the ALD coatings provided a physical barrier between outside oxygen and Ni metal and hindered the oxygen diffusion. It was illustrated that the barrier power of ALD coatings depends on their robustness, thicknesses, and heating rate. Among the tested ALD coatings, Al2O3 showed the maximum protection below 900 °C. However, above that temperature, the ALD coatings dissolved in the Ni substrate. As a result, they could not offer any physical barrier. The dissolution of ALD coatings doped on the NiO film, formed on the top of the Ni foils. As found by the electron energy loss spectroscopy (EELS), this doping affected the electronic transport process, through manipulating the Ni3+/Ni2+ ratio in the NiO films and the chance of polaron hopping. It was demonstrated that by using the ZnO coating, one would be able to decrease the electrical resistance of Ni foils by two orders of magnitude after exposure to 1020 °C for 4 min. In contrast, the Al2O3 coating increased the resistance of the uncoated foil by one order of magnitude, mainly due to the decrease in the ratio of Ni3+/Ni2+.
AB - Although many techniques have been applied to protect nickel (Ni) alloys from oxidation at intermediate and high temperatures, the potential of atomic layer deposition (ALD) coatings has not been fully explored. In this paper, the application of ALD coatings (HfO2, Al2O3, SnO2, and ZnO) on Ni foils has been evaluated by electrical characterization and transmission electron microscopy analyses in order to assess their merit to increase Ni oxidation resistance; particular consideration was given to preserving Ni electrical conductivity at high temperatures. The results suggested that as long as the temperature was below 850 °C, the ALD coatings provided a physical barrier between outside oxygen and Ni metal and hindered the oxygen diffusion. It was illustrated that the barrier power of ALD coatings depends on their robustness, thicknesses, and heating rate. Among the tested ALD coatings, Al2O3 showed the maximum protection below 900 °C. However, above that temperature, the ALD coatings dissolved in the Ni substrate. As a result, they could not offer any physical barrier. The dissolution of ALD coatings doped on the NiO film, formed on the top of the Ni foils. As found by the electron energy loss spectroscopy (EELS), this doping affected the electronic transport process, through manipulating the Ni3+/Ni2+ ratio in the NiO films and the chance of polaron hopping. It was demonstrated that by using the ZnO coating, one would be able to decrease the electrical resistance of Ni foils by two orders of magnitude after exposure to 1020 °C for 4 min. In contrast, the Al2O3 coating increased the resistance of the uncoated foil by one order of magnitude, mainly due to the decrease in the ratio of Ni3+/Ni2+.
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U2 - 10.1088/0957-4484/27/24/245701
DO - 10.1088/0957-4484/27/24/245701
M3 - Article
C2 - 27152985
AN - SCOPUS:84969944562
SN - 0957-4484
VL - 27
JO - Nanotechnology
JF - Nanotechnology
IS - 24
M1 - 245701
ER -