Study on the Growth Parameters and the Electrical and Optical Behaviors of 2D Tungsten Disulfide

Transition-metal dichalcogenides (TMDCs) with atomic thickness are promising materials for next-generation electronic and optoelectronic devices. Herein, we report uniform growth of triangular-shaped (∼40 μm) monolayer WS₂ using the atmospheric-pressure chemical vapor deposition (APCVD) technique in a hydrogen-free environment. We have studied the optical and electrical behaviors of as-grown WS₂ samples. The absorption spectrum of monolayer WS₂ shows two intense excitonic absorption peaks, namely, A (∼630 nm) and B (∼530 nm), due to the direct gap transitions at the K point. Photoluminescence (PL) and fluorescence studies reveal that under the exposure of green light, monolayer WS₂ gives very strong red emission at ∼663 nm. This corresponds to the direct band gap and strong excitonic effect in monolayer WS₂. Furthermore, the efficacy of the synthesized WS₂ crystals for electronic devices is also checked by fabricating field-effect transistors (FETs). FET devices exhibit an electron mobility of μ ∼6 cm² V^-1 s^-1, current ON/OFF ratio of ∼10⁶, and subthreshold swing (SS) of ∼641 mV decade^-1, which are comparable to those of the exfoliated monolayer WS₂ FETs. These findings suggest that our APCVD-grown WS₂ has the potential to be used for next-generation nanoelectronic and optoelectronic applications.