Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.
|Number of pages
|IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
|Published - Dec 2015
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Hardware and Architecture
- Electrical and Electronic Engineering