Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

S. Dasgupta; A. Rajashekhar; K. Majumdar; N. Agrawal; A. Razavieh; S. Trolier-Mckinstry; S. Datta

doi:10.1109/JXCDC.2015.2448414

Sub-kT/q Switching in Strong Inversion in PbZr_0.52Ti_0.48O₃ Gated Negative Capacitance FETs

S. Dasgupta, A. Rajashekhar, K. Majumdar, N. Agrawal, A. Razavieh, S. Trolier-Mckinstry, S. Datta

Research output: Contribution to journal › Article › peer-review

111 Scopus citations

Abstract

Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr_0.52 Ti_0.48O₃ as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO₂) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (I_d ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.

Original language	English (US)
Article number	7130555
Pages (from-to)	43-48
Number of pages	6
Journal	IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Volume	1
DOIs	https://doi.org/10.1109/JXCDC.2015.2448414
State	Published - Dec 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/JXCDC.2015.2448414

Cite this

@article{2fc160ba698e4e1ea549e233d5152085,

title = "Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs",

abstract = "Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.",

author = "S. Dasgupta and A. Rajashekhar and K. Majumdar and N. Agrawal and A. Razavieh and S. Trolier-Mckinstry and S. Datta",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

month = dec,

doi = "10.1109/JXCDC.2015.2448414",

language = "English (US)",

volume = "1",

pages = "43--48",

journal = "IEEE Journal on Exploratory Solid-State Computational Devices and Circuits",

issn = "2329-9231",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

AU - Dasgupta, S.

AU - Rajashekhar, A.

AU - Majumdar, K.

AU - Agrawal, N.

AU - Razavieh, A.

AU - Trolier-Mckinstry, S.

AU - Datta, S.

PY - 2015/12

Y1 - 2015/12

N2 - Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.

AB - Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.

UR - http://www.scopus.com/inward/record.url?scp=85071063610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071063610&partnerID=8YFLogxK

U2 - 10.1109/JXCDC.2015.2448414

DO - 10.1109/JXCDC.2015.2448414

M3 - Article

AN - SCOPUS:85071063610

SN - 2329-9231

VL - 1

SP - 43

EP - 48

JO - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

JF - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

M1 - 7130555

ER -

Sub-kT/q Switching in Strong Inversion in PbZr_0.52Ti_0.48O₃ Gated Negative Capacitance FETs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this