Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface

J. Burnham; D. Sanders; C. Xu; R. Braun; S. Goss; K. Caffey; B. Garrison; N. Winograd

doi:10.1103/PhysRevB.53.9901

Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface

J. Burnham, D. Sanders, C. Xu, R. Braun, S. Goss, K. Caffey, B. Garrison, N. Winograd

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Abstract

The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.

Original language	English (US)
Pages (from-to)	9901-9906
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	53
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.53.9901
State	Published - 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface",

abstract = "The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 {\AA} above the surface plane. These dimers maintain their 2.73-{\AA} spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.",

author = "J. Burnham and D. Sanders and C. Xu and R. Braun and S. Goss and K. Caffey and B. Garrison and N. Winograd",

year = "1996",

doi = "10.1103/PhysRevB.53.9901",

language = "English (US)",

volume = "53",

pages = "9901--9906",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

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TY - JOUR

T1 - Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface

AU - Burnham, J.

AU - Sanders, D.

AU - Xu, C.

AU - Braun, R.

AU - Goss, S.

AU - Caffey, K.

AU - Garrison, B.

AU - Winograd, N.

PY - 1996

Y1 - 1996

N2 - The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.

AB - The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.

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DO - 10.1103/PhysRevB.53.9901

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

ER -

Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface

Abstract

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