Abstract
The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 9901-9906 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1996 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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