Substrate Dependence of the Superfluid Onset of 4He Films

G. A. Csáthy; M. H.W. Chan

Substrate Dependence of the Superfluid Onset of ⁴He Films

G. A. Csáthy, M. H.W. Chan

Research output: Contribution to journal › Article › peer-review

Abstract

We have performed torsional oscillator measurements of ⁴He films adsorbed on porous gold and gold preplated with Ar, Ne, D₂. HD, and H₂. On all substrates, the superfluid response is similar. The thickness of the non-superfluid layer as function of the substrate, however, increases monotonically with the well depth of the atom-sub strate interaction potential.

Original language	English (US)
Pages (from-to)	451-458
Number of pages	8
Journal	Journal of Low Temperature Physics
Volume	121
Issue number	5-6
State	Published - Dec 1 2000

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Cite this

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title = "Substrate Dependence of the Superfluid Onset of 4He Films",

abstract = "We have performed torsional oscillator measurements of 4He films adsorbed on porous gold and gold preplated with Ar, Ne, D2. HD, and H2. On all substrates, the superfluid response is similar. The thickness of the non-superfluid layer as function of the substrate, however, increases monotonically with the well depth of the atom-sub strate interaction potential.",

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AU - Chan, M. H.W.

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N2 - We have performed torsional oscillator measurements of 4He films adsorbed on porous gold and gold preplated with Ar, Ne, D2. HD, and H2. On all substrates, the superfluid response is similar. The thickness of the non-superfluid layer as function of the substrate, however, increases monotonically with the well depth of the atom-sub strate interaction potential.

AB - We have performed torsional oscillator measurements of 4He films adsorbed on porous gold and gold preplated with Ar, Ne, D2. HD, and H2. On all substrates, the superfluid response is similar. The thickness of the non-superfluid layer as function of the substrate, however, increases monotonically with the well depth of the atom-sub strate interaction potential.

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Substrate Dependence of the Superfluid Onset of ⁴He Films

Abstract

All Science Journal Classification (ASJC) codes

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