Abstract
To investigate the effects of substrate material on the performance of GaN photoconductive detectors, similar photodetectors were grown by MOVPE on sapphire, SiC and thick hydride vapor phase epitaxy grown GaN-on-sapphire (GOS) substrates. The grown layers were examined by X-ray diffraction, transmission electron microscopy and atomic microscopy. Based on X-ray diffraction width, dislocation density and surface roughness of the materials grown on each substrate, GOS and SiC exhibited superior performance over sapphire. Improved material quality provided a corresponding improvement in optical response and sharpness of the detectors.
Original language | English (US) |
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Pages (from-to) | 25-27 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 1 |
DOIs | |
State | Published - Jul 5 1999 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)