Substrate effects on GaN photoconductive detector performance

G. M. Smith, J. M. Redwing, R. P. Vaudo, E. M. Ross, J. S. Flynn, V. M. Phanse

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


To investigate the effects of substrate material on the performance of GaN photoconductive detectors, similar photodetectors were grown by MOVPE on sapphire, SiC and thick hydride vapor phase epitaxy grown GaN-on-sapphire (GOS) substrates. The grown layers were examined by X-ray diffraction, transmission electron microscopy and atomic microscopy. Based on X-ray diffraction width, dislocation density and surface roughness of the materials grown on each substrate, GOS and SiC exhibited superior performance over sapphire. Improved material quality provided a corresponding improvement in optical response and sharpness of the detectors.

Original languageEnglish (US)
Pages (from-to)25-27
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - Jul 5 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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