Substrate effects on GaN photodetector performance

Gary M. Smith; Joan M. Redwing; Jeff S. Flynn; Vivek M. Phanse; Robert P. Vaudo

Substrate effects on GaN photodetector performance

Gary M. Smith, Joan M. Redwing, Jeff S. Flynn, Vivek M. Phanse, Robert P. Vaudo

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm². The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.

Original language	English (US)
Number of pages	1
Journal	LEOS Summer Topical Meeting
State	Published - Jan 1 1997
Event	Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: Aug 11 1997 → Aug 15 1997

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

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title = "Substrate effects on GaN photodetector performance",

abstract = "Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm2. The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.",

author = "Smith, {Gary M.} and Redwing, {Joan M.} and Flynn, {Jeff S.} and Phanse, {Vivek M.} and Vaudo, {Robert P.}",

year = "1997",

month = jan,

day = "1",

language = "English (US)",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 LEOS Summer Topical Meeting ; Conference date: 11-08-1997 Through 15-08-1997",

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TY - JOUR

T1 - Substrate effects on GaN photodetector performance

AU - Smith, Gary M.

AU - Redwing, Joan M.

AU - Flynn, Jeff S.

AU - Phanse, Vivek M.

AU - Vaudo, Robert P.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm2. The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.

AB - Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm2. The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030705918&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030705918

SN - 1099-4742

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - Proceedings of the 1997 LEOS Summer Topical Meeting

Y2 - 11 August 1997 through 15 August 1997

ER -

Substrate effects on GaN photodetector performance

Abstract

All Science Journal Classification (ASJC) codes

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