TY - GEN
T1 - Substrate Integrated Waveguides in Glass Interposers for mm Wave Applications
AU - Ur Rehman, Mutee
AU - Watanabe, Atom
AU - Ravichandran, Siddharth
AU - Swaminathan, Madhavan
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/7
Y1 - 2021/6/7
N2 - This paper presents the first demonstration of Substrate Integrated Waveguides in glass interposers operating in D-band (110 GHz to 170 GHz) for mmWave applications. The material stack-up consists of 100 μmthick AGC ENA1 glass core laminated with 15 μm thick Ajinomoto Build up Films (ABF GL102) on both sides. The stack-up has been metallized using a newly developed Semi Additive Process (SAP). SIWs have been fed using broadband microstrip taper transitions. Conductor Backed Coplanar Waveguide (CBCPW) to microstrip transitions were designed to probe the samples. Cascade Infinity Probes (170-S-GSG-75-BT) were used for the electrical measurements. The measured insertion loss of glass based SIWs varies from 0.5dB/mm to 1 dB/mm in the entire D-band. For most of the frequencies it varies in the range of 0.5-0.8 dB/mm. The performance of glass interposer based SIWs has been compared with SIWs in LCP and silicon interposer.
AB - This paper presents the first demonstration of Substrate Integrated Waveguides in glass interposers operating in D-band (110 GHz to 170 GHz) for mmWave applications. The material stack-up consists of 100 μmthick AGC ENA1 glass core laminated with 15 μm thick Ajinomoto Build up Films (ABF GL102) on both sides. The stack-up has been metallized using a newly developed Semi Additive Process (SAP). SIWs have been fed using broadband microstrip taper transitions. Conductor Backed Coplanar Waveguide (CBCPW) to microstrip transitions were designed to probe the samples. Cascade Infinity Probes (170-S-GSG-75-BT) were used for the electrical measurements. The measured insertion loss of glass based SIWs varies from 0.5dB/mm to 1 dB/mm in the entire D-band. For most of the frequencies it varies in the range of 0.5-0.8 dB/mm. The performance of glass interposer based SIWs has been compared with SIWs in LCP and silicon interposer.
UR - http://www.scopus.com/inward/record.url?scp=85118542542&partnerID=8YFLogxK
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U2 - 10.1109/IMS19712.2021.9574832
DO - 10.1109/IMS19712.2021.9574832
M3 - Conference contribution
AN - SCOPUS:85118542542
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 339
EP - 341
BT - 2021 IEEE MTT-S International Microwave Symposium, IMS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE MTT-S International Microwave Symposium, IMS 2021
Y2 - 7 June 2021 through 25 June 2021
ER -