270 nm AlGaN UV Light-Emitting Diodes (LEDs) were exposed to 1–5 Mrad fluences of Co-60 γ-rays. The effect of the exposure to radiation was a ∼40% reduction in optical output after the highest fluence. No significant midgap emission was induced in the electro-luminescence spectra of the irradiated LEDs. We ascribe the decrease in optical output to creation of non-radiative states within the active regions. There were small (5–10%) increases in forward and reverse current as a result of irradiation with an effective carrier removal rate of <1 cm−1. The irradiation did not produce any increase in degradation rate of the LEDs output power under high drive current (95 mA) compared to unirradiated devices, which is consistent with the lack of midgap emission. The relatively small changes in electrical and optical properties, along with the resistance of the AlxGa1-xN/AlN to displacement damage effects indicate these devices may be well-suited to harsh terrestrial and space radiation applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering