Superconducting InGaAs junction field-effect transistors with Nb electrodes

A. W. Kleinsasser, T. N. Jackson, D. McInturff, F. Rammo, G. D. Pettit, J. M. Woodall

Research output: Contribution to journalArticlepeer-review

60 Scopus citations


We describe the design, fabrication, and characterization of superconducting In0.47Ga0.53As junction field-effect transistors (JFETs) with Nb source and drain electrodes. In 0.47Ga0.53As has the advantage of combining large coherence length and high Schottky barrier transmission, making it a very attractive material on which to base superconducting FETs. At large voltages these devices behave as normal FETs in either enhancement or depletion modes, while at small voltages they act as Josephson junctions or super-Schottky diodes. Both normal and super- currents are controlled by the gate.

Original languageEnglish (US)
Pages (from-to)1909-1911
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Superconducting InGaAs junction field-effect transistors with Nb electrodes'. Together they form a unique fingerprint.

Cite this