Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition

X. H. Zeng; A. V. Pogrebnyakov; M. H. Zhu; J. E. Jones; X. X. Xi; S. Y. Xu; E. Wertz; Q. Li; J. M. Redwing; J. Lettieri; V. Vaithyanathan; D. G. Schlom; Zi Kui Liu; O. Trithaveesak; J. Schubert

doi:10.1063/1.1563840

Superconducting MgB₂ thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition

X. H. Zeng, A. V. Pogrebnyakov, M. H. Zhu, J. E. Jones, X. X. Xi, S. Y. Xu, E. Wertz, Q. Li, J. M. Redwing, J. Lettieri, V. Vaithyanathan, D. G. Schlom, Zi Kui Liu, O. Trithaveesak, J. Schubert

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128 Scopus citations

Abstract

The growth of MgB₂ thin films by hybrid physical-chemical vapor deposition (HPCVD) was discussed. 4H-SiC and 6H-SiC, the polytypes of silicon carbide single crystals, were used as the substrates for the purpose. The chemical stability of SiC against the reactions with Mg, B, Mg-B compounds under HPCVD deposition conditions was shown by thermodynamic calculations. SiC was found as the most suitable substrate for MgB₂ thin films.

Original language	English (US)
Pages (from-to)	2097-2099
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	13
DOIs	https://doi.org/10.1063/1.1563840
State	Published - Mar 31 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1563840

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Zeng, X. H., Pogrebnyakov, A. V., Zhu, M. H., Jones, J. E., Xi, X. X., Xu, S. Y., Wertz, E., Li, Q., Redwing, J. M., Lettieri, J., Vaithyanathan, V., Schlom, D. G., Liu, Z. K., Trithaveesak, O., & Schubert, J. (2003). Superconducting MgB₂ thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition. Applied Physics Letters, 82(13), 2097-2099. https://doi.org/10.1063/1.1563840

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title = "Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition",

abstract = "The growth of MgB2 thin films by hybrid physical-chemical vapor deposition (HPCVD) was discussed. 4H-SiC and 6H-SiC, the polytypes of silicon carbide single crystals, were used as the substrates for the purpose. The chemical stability of SiC against the reactions with Mg, B, Mg-B compounds under HPCVD deposition conditions was shown by thermodynamic calculations. SiC was found as the most suitable substrate for MgB2 thin films.",

author = "Zeng, {X. H.} and Pogrebnyakov, {A. V.} and Zhu, {M. H.} and Jones, {J. E.} and Xi, {X. X.} and Xu, {S. Y.} and E. Wertz and Q. Li and Redwing, {J. M.} and J. Lettieri and V. Vaithyanathan and Schlom, {D. G.} and Liu, {Zi Kui} and O. Trithaveesak and J. Schubert",

year = "2003",

month = mar,

day = "31",

doi = "10.1063/1.1563840",

language = "English (US)",

volume = "82",

pages = "2097--2099",

journal = "Applied Physics Letters",

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Zeng, XH, Pogrebnyakov, AV, Zhu, MH, Jones, JE, Xi, XX, Xu, SY, Wertz, E, Li, Q , Redwing, JM, Lettieri, J, Vaithyanathan, V, Schlom, DG, Liu, ZK, Trithaveesak, O & Schubert, J 2003, 'Superconducting MgB₂ thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition', Applied Physics Letters, vol. 82, no. 13, pp. 2097-2099. https://doi.org/10.1063/1.1563840

TY - JOUR

T1 - Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition

AU - Zeng, X. H.

AU - Pogrebnyakov, A. V.

AU - Zhu, M. H.

AU - Jones, J. E.

AU - Xi, X. X.

AU - Xu, S. Y.

AU - Wertz, E.

AU - Li, Q.

AU - Redwing, J. M.

AU - Lettieri, J.

AU - Vaithyanathan, V.

AU - Schlom, D. G.

AU - Liu, Zi Kui

AU - Trithaveesak, O.

AU - Schubert, J.

PY - 2003/3/31

Y1 - 2003/3/31

N2 - The growth of MgB2 thin films by hybrid physical-chemical vapor deposition (HPCVD) was discussed. 4H-SiC and 6H-SiC, the polytypes of silicon carbide single crystals, were used as the substrates for the purpose. The chemical stability of SiC against the reactions with Mg, B, Mg-B compounds under HPCVD deposition conditions was shown by thermodynamic calculations. SiC was found as the most suitable substrate for MgB2 thin films.

AB - The growth of MgB2 thin films by hybrid physical-chemical vapor deposition (HPCVD) was discussed. 4H-SiC and 6H-SiC, the polytypes of silicon carbide single crystals, were used as the substrates for the purpose. The chemical stability of SiC against the reactions with Mg, B, Mg-B compounds under HPCVD deposition conditions was shown by thermodynamic calculations. SiC was found as the most suitable substrate for MgB2 thin films.

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U2 - 10.1063/1.1563840

DO - 10.1063/1.1563840

M3 - Article

AN - SCOPUS:0037474949

SN - 0003-6951

VL - 82

SP - 2097

EP - 2099

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Superconducting MgB₂ thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition

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