Abstract
Cleaning of silicon surfaces in chlorine based remote plasma can lead to roughening of the cleaned surface. In this paper, correlation between surface damage and various parameters of the remote plasma cleaning are determined. An ultrathin oxide grown prior to cleaning or addition of oxygen to the gaseous cleaning mixture are studied as a means to control surface damage.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 129-140 |
| Number of pages | 12 |
| Journal | Proceedings - The Electrochemical Society |
| Volume | 90 |
| Issue number | 9 |
| State | Published - 1990 |
| Event | Procedings of the First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (held at the 176th Meeting of the Electrochemical Society) - Hollywood, FL, USA Duration: Oct 15 1989 → Oct 20 1989 |
All Science Journal Classification (ASJC) codes
- General Engineering