Surface dopant concentration monitoring using noncontact surface charge profiling

P. Roman, J. Staffa, S. Fakhouri, M. Brubaker, J. Ruzyllo, K. Torek, E. Kamieniecki

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


This study is concerned with variations of the concentration of active boron dopant in the near surface region of silicon wafers. Boron can be deactivated by pairing with hydrogen or metals, particularly Cu and Fe, all of which may originate from the surface polishing process. The temperature dependence of boron activation is studied using the surface charge profiling method. Based on the determined activation energy of 1.28 eV it was concluded that in the p-type wafers used in this study initially observed boron deactivation was dominated by its interaction with hydrogen introduced during wafer polishing.

Original languageEnglish (US)
Pages (from-to)2297-2300
Number of pages4
JournalJournal of Applied Physics
Issue number4
StatePublished - Feb 15 1998

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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