@inproceedings{8b639ac5739345cfb076b56a640497cb,
title = "Surface-imaged silicon polymers for 193-nm excimer laser lithography",
abstract = "A negative-tone surface-imaged resist process based upon the area-selective oxidation of silicon-backbone polymers is described. A bromine-based plasma is the resist developer, where the oxidized polymer inhibits the bromine-initiated etching to yield a negative-tone image. Using either polysilanes or polysilynes, resist sensitivities in the range of 50 mJ/cm2 have been obtained and resolutions to 0.2 μm achieved. Photosensitizers can be added to further accelerate the photo-oxidation, resulting in sensitivities less than 20 mJ/cm2. The latent image formation is reciprocal with respect to fluence in the range 0.05 to 1.5 mJ/cm2 per pulse and with respect to repetition rate. The photo-oxidation contrast is one, whereas the bromine-based etch step can have a contrast as high as 5. In addition, the exposure, focus, and development latitudes have all been characterized and compared to other surface-imaged 193 nm resist systems.",
author = "Kunz, \{Roderick R.\} and Horn, \{Mark W.\} and Goodman, \{R. B.\} and Bianconi, \{Patricia A.\} and Smith, \{David A.\} and Eshelman, \{J. R.\} and Wallraff, \{Gregory M.\} and Miller, \{Robert D.\} and Ginsburg, \{Eric J.\}",
year = "1992",
doi = "10.1117/12.59738",
language = "English (US)",
isbn = "0819408271",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "385--393",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Advances in Resist Technology and Processing IX ; Conference date: 09-03-1992 Through 10-03-1992",
}